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Ryu, Sei-Hyung
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1

Study of Dopant Activation and Ionization for Phosphorus in..:

Das, Suman ; Lichtenwalner, Daniel J. ; Dixit, Hemant...
Journal of Electronic Materials.  53 (2024)  6 - p. 2806-2810 , 2024
Link: https://doi.org/10.1007/..
 
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2

Measurement of the $D_{it}$ Changes Under BTI-Stress in 4H-..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),
Steinmann, Philipp ; Lichtenwalner, Daniel J. ; Stein, Shane... - p. P58.SiC-1-P58.SiC-4 , 2024
Link: https://doi.org/10.1109/..
 
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3

Investigation into Relationship of the Switching Performanc..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Jeff Joohyung ; Park, Jae-Hyung ; Sabri, Shadi... - p. 148-151 , 2024
Link: https://doi.org/10.1109/..
 
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4

SiC and GaN Power Devices:

, In: More-than-Moore Devices and Integration for Semiconductors,
Zekentes, Konstantinos ; Veliadis, Victor ; Ryu, Sei-Hyung... - p. 47-104 , 2023
Link: https://doi.org/10.1007/..
 
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5

Modeling of the Snappy, and Soft Reverse Recovery of SiC MO..:

, In: 2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),
Rashid, Arman Ur ; Brooks, Britt ; Manz, Steven.. - p. 310-313 , 2023
Link: https://doi.org/10.1109/..
 
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6

Improvements to the Analytical Model to Describe UIS Events:

Steinmann, Philipp ; Ganguly, Satyaki ; Hull, Brett...
IEEE Transactions on Electron Devices.  69 (2022)  7 - p. 3848-3853 , 2022
Link: https://doi.org/10.1109/..
 
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7

Negative Gate Bias TDDB evaluation of n-Channel SiC Vertica..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Ganguly, Satyaki ; Lichtenwalner, Daniel J. ; Isaacson, Caleb... - p. 8B.1-1-8B.1-6 , 2022
Link: https://doi.org/10.1109/..
 
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8

Evaluation and Characterization of 15-kV, 4H-SiC N-Channel ..:

, In: 2021 IEEE Pulsed Power Conference (PPC),
Ogunniyi, Aderinto A. ; Hinojosa, Miguel ; O'Brien, Heather K... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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9

High-Voltage Silicon Carbide Thyristors on N-Doped Epi for ..:

, In: 2021 IEEE Pulsed Power Conference (PPC),
O'Brien, Heather ; Ogunniyi, Aderinto ; Ryu, Sei-Hyung.. - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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10

Accelerated Testing of SiC Power Devices:

, In: 2020 IEEE International Integrated Reliability Workshop (IIRW),
Lichtenwalner, Daniel J. ; Sabri, Shadi ; Brunt, Edward van... - p. 1-6 , 2020
Link: https://doi.org/10.1109/..
 
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11

High-Power Pulsed Evaluation of High-Voltage SiC N-GTO:

, In: 2019 IEEE 7th Workshop on Wide Bandgap Power Devices and Applications (WiPDA),
Ogunniyi, Aderinto ; O'Brien, Heather ; Ryu, Sei-Hyung. - p. 425-429 , 2019
Link: https://doi.org/10.1109/..
 
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12

Performance and Reliability of SiC Power MOSFETs:

Lichtenwalner, Daniel J. ; Hull, Brett ; Pala, Vipindas...
MRS Advances.  1 (2016)  2 - p. 81-89 , 2016
Link: https://doi.org/10.1557/..
 
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13

High-Voltage Silicon-Carbide Thyristor with an n-type Block..:

Levinshtein, M. E. ; Mnatsakanov, T. T. ; Yurkov, S. N....
Semiconductors.  50 (2016)  3 - p. 404-410 , 2016
Link: https://doi.org/10.1134/..
 
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14

Zero voltage switching characterization of 12 kV SiC N-IGBT:

, In: 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD),
Kadavelugu, Arun ; Bhattcharya, Subhashish ; Baliga, B. Jayant... - p. 350-353 , 2014
Link: https://doi.org/10.1109/..
 
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15

A 4H Silicon Carbide Gate Buffer for Integrated Power Syste..:

Ericson, Nance ; Frank, Shane ; Britton, Chuck...
IEEE Transactions on Power Electronics.  29 (2014)  2 - p. 539-542 , 2014
Link: https://doi.org/10.1109/..
 
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