Sabinina, I.V.
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2

HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetecto:

Marchishin, I. V. ; Sabinina, I. V. ; Sidorov, G. Yu....
Journal of Communications Technology and Electronics.  65 (2020)  3 - p. 316-320 , 2020
 
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Molecular Beam Epitaxy of CdHgTe: Current State and Horizon:

Varavin, V. S. ; Dvoretskii, S. A. ; Mikhailov, N. N....
Optoelectronics, Instrumentation and Data Processing.  56 (2020)  5 - p. 456-469 , 2020
 
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7

Effect of Surface Treatment on the Charge Density at the In..:

Sidorov, G. Yu. ; Gorshkov, D. V. ; Sidorov, Yu. G...
Optoelectronics, Instrumentation and Data Processing.  56 (2020)  5 - p. 492-497 , 2020
 
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8

Photodetectors with 384 × 288 Matrix Elements for the Infra..:

Zverev, A. V. ; Suslyakov, A. O. ; Sabinina, I. V....
Journal of Communications Technology and Electronics.  64 (2019)  9 - p. 1024-1029 , 2019
 
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9

Monte Carlo Simulation of Charge Carrier Diffusion for Dete..:

Vishnyakov, A. V. ; Vasiliev, V. V. ; Sabinina, I. V...
Optoelectronics, Instrumentation and Data Processing.  55 (2019)  5 - p. 519-524 , 2019
 
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10

A Megapixel Matrix Photodetector of the Middle Infrared Ran..:

Bazovkin, V. M. ; Varavin, V. S. ; Vasil'ev, V. V....
Journal of Communications Technology and Electronics.  64 (2019)  9 - p. 1011-1015 , 2019
 
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13

List of Contributors:

, In: Advances in Semiconductor Nanostructures,
Akhundov, I.O. ; Aliev, V.Sh. ; Alperovich, V.L.... - p. xv-xxi , 2017
 
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14

Molecular Beam Epitaxy of Cd x Hg 1−x Te:

, In: Advances in Semiconductor Nanostructures,
Sidorov, Yu.G. ; Anciferov, A.P. ; Varavin, V.S.... - p. 297-323 , 2017
 
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