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Sachid, A.
20  results:
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1

Materials Technology Co-optimization of Self-Aligned Gate C..:

, In: 2020 IEEE Symposium on VLSI Technology,
Pal, A. ; Ferrell, J. ; Sachid, A.... - p. 1-2 , 2020
Link: https://doi.org/10.1109/..
 
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2

Impact of MOL/BEOL Air-Spacer on Parasitic Capacitance and ..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Pal, Ashish ; Natarajan, Sanjay ; Ayyagari, Buvna... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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3

Highly-Doped Through-Contact Silicon Epi Design at 3 nm nod:

, In: 2019 Device Research Conference (DRC),
Mittal, S. ; Pal, A. ; Saremi, M.... - p. 55-56 , 2019
Link: https://doi.org/10.1109/..
 
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4

Compact Modeling Source-to-Drain Tunneling in Sub-10-nm GAA..:

Lin, Yen-Kai ; Duarte, Juan Pablo ; Kushwaha, Pragya...
IEEE Transactions on Electron Devices.  64 (2017)  9 - p. 3576-3581 , 2017
Link: https://doi.org/10.1109/..
 
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5

Air stable n-doping of WSe2 by silicon nitride thin films w..:

Chen, Kevin ; Kiriya, Daisuke ; Hettick, Mark...
APL Materials.  2 (2014)  9 - p. 092504 , 2014
Link: https://doi.org/10.1063/..
 
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6

Solid-Supported Heterogenized Palladium Nanoparticles: Prop..:

Pasricha, Sharda ; Rangarajan, T. M. ; Srivastava, Abhay...
SynOpen.  7 (2023)  1 - p. 43-45 , 2023
Link: https://doi.org/10.1055/..
 
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7

High-gain monolithic 3D CMOS inverter using layered semicon..:

Sachid, Angada B. ; Desai, Sujay B. ; Javey, Ali.
Applied Physics Letters.  111 (2017)  22 - p. , 2017
Link: https://doi.org/10.1063/..
 
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8

Monolithic 3D CMOS Using Layered Semiconductors:

Sachid, Angada B. ; Tosun, Mahmut ; Desai, Sujay B....
Advanced Materials.  28 (2016)  13 - p. 2547-2554 , 2016
Link: https://doi.org/10.1002/..
 
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9

MoS2transistors with 1-nanometer gate lengths:

Desai, Sujay B. ; Madhvapathy, Surabhi R. ; Sachid, Angada B....
Science.  354 (2016)  6308 - p. 99-102 , 2016
Link: https://doi.org/10.1126/..
 
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10

MoS₂ transistors with 1-nanometer gate lengths:

Desai, Sujay B. ; Madhvapathy, Surabhi R. ; Sachid, Angada B....
Science.  354 (2016)  6308 - p. 99-102 , 2016
Link: https://www.jstor.org/st..
 
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11

Field-Effect Transistors Built from All Two-Dimensional Mat..:

Roy, Tania ; Tosun, Mahmut ; Kang, Jeong Seuk...
ACS Nano.  8 (2014)  6 - p. 6259-6264 , 2014
Link: https://doi.org/10.1021/..
 
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12

High-Gain Inverters Based on WSe2 Complementary Field-Effec..:

Tosun, Mahmut ; Chuang, Steven ; Fang, Hui...
ACS Nano.  8 (2014)  5 - p. 4948-4953 , 2014
Link: https://doi.org/10.1021/..
 
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13

Automated design and optimization of circuits in emerging t..:

, In: Proceedings of the 2009 Asia and South Pacific Design Automation Conference,
Thakker, Rajesh A. ; Sathe, Chaitanya ; Sachid, Angada B.... - p. 504-509 , 2009
Link: https://dl.acm.org/doi/1..
 
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14

Analysis of Threshold Voltage Variations of FinFETs Relatin..:

Kobayashi, Yusuke ; Sachid, Angada B. ; Tsutsui, Kazuo...
ECS Transactions.  16 (2009)  40 - p. 23-27 , 2009
Link: https://doi.org/10.1149/..
 
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15

Drain current model for nanoscale double-gate MOSFETs:

Hariharan, Venkatnarayan ; Thakker, Rajesh ; Singh, Karmvir...
Solid-State Electronics.  53 (2009)  9 - p. 1001-1008 , 2009
Link: https://doi.org/10.1016/..
 
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