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Saitoh, Motofumi
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1

Microscopic characterization of the C–F bonds in fluorine–g..:

Yoshida, Kaname ; Sugawara, Yoshihiro ; Saitoh, Motofumi...
Journal of Power Sources.  445 (2020)  - p. 227320 , 2020
Link: https://doi.org/10.1016/..
 
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2

3aA_MI-4Microscopic Analysis of Fluorine-graphite Intercala..:

Yoshida, Kaname ; Sugawara, Yoshihiro ; Saitoh, Motofumi...
Microscopy.  67 (2018)  suppl_2 - p. i27-i27 , 2018
Link: https://doi.org/10.1093/..
 
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3

Systematic analysis of electron energy-loss near-edge struc..:

Saitoh, Motofumi ; Gao, Xiang ; Ogawa, Takafumi...
Physical Chemistry Chemical Physics.  20 (2018)  38 - p. 25052-25061 , 2018
Link: https://doi.org/10.1039/..
 
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4

In-situ electron holography of carrier accumulation at SiO2..:

Ikarashi, Nobuyuki ; Kaneko, Kisyoh ; Saitoh, Motofumi.
Japanese Journal of Applied Physics.  53 (2014)  3 - p. 031101 , 2014
Link: https://doi.org/10.7567/..
 
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5

Electron Holography Characterization of Ultra Shallow Junct..:

Ikarashi, Nobuyuki ; Oshida, Makiko ; Miyamura, Makoto...
Japanese Journal of Applied Physics.  47 (2008)  4S - p. 2365 , 2008
Link: https://doi.org/10.1143/..
 
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6

Bias Temperature Instability Characterization of Advanced G..:

Fujieda, Shinji ; Terai, Masayuki ; Saitoh, Motofumi...
ECS Transactions.  6 (2007)  3 - p. 185-202 , 2007
Link: https://doi.org/10.1149/..
 
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7

Analysis of Electronic Structure of High-K Films using STEM..:

Ikarashi, Nobuyuki ; Manabe, Kenzo ; Takahashi, Kensuke.
ECS Transactions.  3 (2006)  3 - p. 143-152 , 2006
Link: https://doi.org/10.1149/..
 
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8

Characterization of interface defects related to negative-b..:

Fujieda, Shinji ; Miura, Yoshinao ; Saitoh, Motofumi..
Microelectronics Reliability.  45 (2005)  1 - p. 57-64 , 2005
Link: https://doi.org/10.1016/..
 
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9

1.2 nm HfSiON/SiON Stacked Gate Insulators for 65-nm-Node M..:

Saitoh, Motofumi ; Terai, Masayuki ; Ikarashi, Nobuyuki...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2330 , 2005
Link: https://doi.org/10.1143/..
 
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10

Influence of Charge Traps within HfSiON Bulk on Positive an..:

Fujieda, Shinji ; Kotsuji, Setsu ; Morioka, Ayuka..
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2385 , 2005
Link: https://doi.org/10.1143/..
 
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11

Breakdown Mechanisms and Lifetime Prediction for 90-nm-Node..:

Terai, Masayuki ; Yabe, Yuko ; Fujieda, Shinji...
Japanese Journal of Applied Physics.  44 (2005)  4S - p. 2441 , 2005
Link: https://doi.org/10.1143/..
 
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12

High-quality HfSixOy gate dielectrics fabricated by solid p..:

Watanabe, Heiji ; Saitoh, Motofumi ; Ikarashi, Nobuyuki.
Applied Physics Letters.  85 (2004)  3 - p. 449-451 , 2004
Link: https://doi.org/10.1063/..
 
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13

Interface defects responsible for negative-bias temperature..:

Fujieda, Shinji ; Miura, Yoshinao ; Saitoh, Motofumi...
Applied Physics Letters.  82 (2003)  21 - p. 3677-3679 , 2003
Link: https://doi.org/10.1063/..
 
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14

A highly manufacturable low power and high speed HfSiO CMOS..:

, In: IEEE International Electron Devices Meeting 2003,
Iwamoto, Toshiyuki ; Ogura, Takashi ; Terai, Masayuki... - p. 27.5.1-27.5.4 , 2003
Link: https://doi.org/10.1109/..
 
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15

Microscopic characterization of the C–F bonds in fluorine–g..:

Yoshida, Kaname ; Sugawara, Yoshihiro ; Saitoh, Motofumi...
10.1016/j.jpowsour.2019.227320.  , 2020
Link: http://hdl.handle.net/24..
 
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