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Samizo, Akane
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1

Material design using calculation phase diagram for refract..:

Arai, Yutaro ; Saito, Manami ; Samizo, Akane...
International Journal of Applied Ceramic Technology.  21 (2024)  4 - p. 2702-2711 , 2024
Link: https://doi.org/10.1111/..
 
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2

Control of Hole Density in Russellite Bi2WO6 via Intentiona..:

Minohara, Makoto ; Dobashi, Yuka ; Kikuchi, Naoto...
Inorganic Chemistry.  62 (2023)  23 - p. 8940-8947 , 2023
Link: https://doi.org/10.1021/..
 
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3

Effect of intentional chemical doping on crystallographic a..:

Minohara, Makoto ; Kikuchi, Naoto ; Tsukuda, Kouhei...
Materials & Design.  216 (2022)  - p. 110549 , 2022
Link: https://doi.org/10.1016/..
 
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4

Tuning of hole carrier density in p-type α-SnWO4 by exploit..:

Minohara, Makoto ; Dobashi, Yuka ; Kikuchi, Naoto...
Materials Advances.  3 (2022)  24 - p. 9111-9116 , 2022
Link: https://doi.org/10.1039/..
 
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5

Disorders and oxygen vacancies in p‐type Sn2B2O7 (B = Nb, T..:

Samizo, Akane ; Minohara, Makoto ; Kikuchi, Naoto...
Journal of the American Ceramic Society.  106 (2022)  2 - p. 1540-1546 , 2022
Link: https://doi.org/10.1111/..
 
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6

Elaboration of near‐valence band defect states leading dete..:

Minohara, Makoto ; Asanuma, Shutaro ; Asai, Hidehiro...
Nano Select.  3 (2021)  6 - p. 1012-1020 , 2021
Link: https://doi.org/10.1002/..
 
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7

Site-Selective Oxygen Vacancy Formation Derived from the Ch..:

Samizo, Akane ; Minohara, Makoto ; Kikuchi, Naoto...
The Journal of Physical Chemistry C.  125 (2021)  31 - p. 17117-17124 , 2021
Link: https://doi.org/10.1021/..
 
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8

Bipolar Semiconducting Properties in α-SnWO4 Based on the C..:

Minohara, Makoto ; Dobashi, Yuka ; Kikuchi, Naoto...
Inorganic Chemistry.  60 (2021)  11 - p. 8035-8041 , 2021
Link: https://doi.org/10.1021/..
 
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9

Double Charge Polarity Switching in Sb‐Doped SnSe with Swit..:

Yamamoto, Chihiro ; He, Xinyi ; Katase, Takayoshi...
Advanced Functional Materials.  31 (2020)  8 - p. , 2020
Link: https://doi.org/10.1002/..
 
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10

Effect of Crystal Structure on Hole Carrier Generation in W..:

Samizo, Akane ; Kikuchi, Naoto ; Nishio, Keishi
MRS Advances.  4 (2019)  1 - p. 27-32 , 2019
Link: https://doi.org/10.1557/..
 
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11

In-gap state generated by La-on-Sr substitutional defects w..:

Aiura, Yoshihiro ; Ozawa, Kenichi ; Tezuka, Yasuhisa...
Physical Chemistry Chemical Physics.  21 (2019)  27 - p. 14646-14653 , 2019
Link: https://doi.org/10.1039/..
 
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12

Tailoring the Hole Mobility in SnO Films by Modulating the ..:

Minohara, Makoto ; Samizo, Akane ; Kikuchi, Naoto...
The Journal of Physical Chemistry C.  124 (2019)  2 - p. 1755-1760 , 2019
Link: https://doi.org/10.1021/..
 
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13

Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordi..:

Samizo, Akane ; Kikuchi, Naoto ; Aiura, Yoshihiro..
Chemistry of Materials.  30 (2018)  22 - p. 8221-8225 , 2018
Link: https://doi.org/10.1021/..
 
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14

Disappearance of Localized Valence Band Maximum of Ternary ..:

Aiura, Yoshihiro ; Ozawa, Kenichi ; Hase, Izumi...
The Journal of Physical Chemistry C.  121 (2017)  17 - p. 9480-9488 , 2017
Link: https://doi.org/10.1021/..
 
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15

Carrier generation in a p-type oxide semiconductor: Sn2(Nb2..:

Kikuchi, Naoto ; Samizo, Akane ; Ikeda, Shintaro...
Physical Review Materials.  1 (2017)  2 - p. , 2017
Link: https://doi.org/10.1103/..
 
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