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Samnouni
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1

fmax=800 GHz with 75 nm gate length and asymmetric gate rec..:

, In: 2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz),
Samnouni ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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2

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G. ; Frayssinet, E. ; Samnouni, M....
Journal of Electronic Materials.  52 (2023)  8 - p. 5249-5255 , 2023
Link: https://doi.org/10.1007/..
 
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3

1.2 THz maximum frequency of oscillation achieved by using ..:

, In: 2019 Compound Semiconductor Week (CSW),
Samnouni, M. ; Wichmann, N. ; Wallart, X.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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4

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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5

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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6

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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7

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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8

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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9

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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10

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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11

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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12

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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13

High Breakdown Voltage GaN Schottky Diodes for THz Frequenc..:

Di Gioia, G ; Frayssinet, E ; Samnouni, M...
info:eu-repo/semantics/altIdentifier/doi/10.1007/s11664-023-10499-3.  , 2023
Link: https://hal.science/hal-..
 
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14

GaN schottky diode on silicon substrate for high power THz ..:

Di Gioia, Giuseppe ; Samnouni, M ; Bouillaud, H...
hal-03384345.  , 2021
Link: https://hal.archives-ouv..
 
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15

75 nm gate length PHEMT with f max = 800 GHz using asymmetr..:

Samnouni, M ; Wichmann, Nicolas ; Wallart, X...
info:eu-repo/semantics/altIdentifier/doi/10.1109/TED.2021.3098255.  , 2021
Link: https://hal.science/hal-..
 
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