Saxena, Manoj
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2

RF Analysis of Tapered Angle Hetero-Junction Dopingless TFE..:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Sharma, Monika ; Narang, Rakhi ; Saxena, Manoj. - p. 257-263 , 2024
 
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4

On the Single-Event Burnout Performance of a GaN HEMT With ..:

Sehra, Khushwant ; Chanchal ; Malik, Amit...
IEEE Transactions on Electron Devices.  71 (2024)  7 - p. 4072-4078 , 2024
 
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Effective Mobility Extraction of GaN-HEMT Using S-Parameter:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
 
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9

Impact of Pocket Doped Mg2Si/Si Heterojunction Ge Gated TFE..:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Khurana, Manisha ; Upasana ; Saxena, Manoj. - p. 265-273 , 2024
 
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11

Effect of Helium Gas Addition to SF6/O2 Chemistry for SiC D..:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Chanchal ; Kumar, Sunil ; Sawal, Rajeev... - p. 57-63 , 2024
 
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12

Comparative Investigation of Single and Double Channel AlGa..:

, In: Springer Proceedings in Physics; The Physics of Semiconductor Devices,
Das, Shreyasi ; Sehra, Khushwant ; Kumari, Vandana.. - p. 127-140 , 2024
 
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14

Physical insights into the reliability of sunken source con..:

Chanchal ; Malik, Amit ; Sehra, Khushwant...
Microelectronics Reliability.  148 (2023)  - p. 115170 , 2023
 
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