E-LIB Suche - Ergebnisse für: Schanovsky, Franz

1

An Efficient and Accurate DTCO Simulation Framework for Rel..:

, In: 2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM),

Karner, Markus ; Rzepa, Gerhard ; Schleich, Christian... - p. 1-3 , 2024

Link: https://doi.org/10.1109/..

2

A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-I..:

Thesberg, Mischa ; Schanovsky, Franz ; Zhao, Ying...
Micromachines. 15 (2024) 7 - p. 829 , 2024

Link: https://doi.org/10.3390/..

3

Modeling the Operation of Charge Trap Flash Memory—Part II:..:

Verreck, Devin ; Schanovsky, Franz ; Arreghini, Antonio...
IEEE Transactions on Electron Devices. 71 (2024) 1 - p. 554-559 , 2024

Link: https://doi.org/10.1109/..

4

Quasi-Fermi-Based Charge Transport Scheme for Device Simula..:

Stanojevic, Zlatan ; Gonzalez-Medina, Jose Maria ; Schanovsky, Franz.
IEEE Transactions on Electron Devices. 70 (2023) 2 - p. 708-713 , 2023

Link: https://doi.org/10.1109/..

5

On the Modeling of Polycrystalline Ferroelectric Thin Films..:

Thesberg, Mischa ; Alam, Md Nur K. ; Truijen, Brecht...
IEEE Transactions on Electron Devices. 69 (2022) 6 - p. 3105-3112 , 2022

Link: https://doi.org/10.1109/..

6

Performance and Variability-Aware SRAM Design for Gate-All-..:

, In: 2022 International Electron Devices Meeting (IEDM),

Rzepa, Gerhard ; Bhuwalka, Krishna K. ; Baumgartner, Oskar... - p. 15.1.1-15.1.4 , 2022

Link: https://doi.org/10.1109/..

7

The Significance of Nonlinear Screening and the pH Interfer..:

Santermans, Sybren ; Schanovsky, Franz ; Gupta, Mihir...
ACS Sensors. 6 (2021) 3 - p. 1049-1056 , 2021

Link: https://doi.org/10.1021/..

8

Semi-Automated Extraction of the Distribution of Single Def..:

Stampfer, Bernhard ; Schanovsky, Franz ; Grasser, Tibor.
Micromachines. 11 (2020) 4 - p. 446 , 2020

Link: https://doi.org/10.3390/..

9

Mobility Modeling in Advanced MOSFETs with Ultra-Thin Silic..:

Sverdlov, Viktor A. ; Windbacher, Thomas ; Schanovsky, Franz.
Journal of Integrated Circuits and Systems. 4 (2020) 2 - p. 55-60 , 2020

Link: https://doi.org/10.29292..

10

(Invited) Multiphonon Processes as the Origin of Reliabilit..:

Goes, Wolfgang ; Toledano-Luque, Maria ; Schanovsky, Franz...
ECS Transactions. 58 (2013) 7 - p. 31-47 , 2013

Link: https://doi.org/10.1149/..

11

Mechanisms and performance of metal oxide resistive RAM (RR..:

, In: 2013 IEEE International Integrated Reliability Workshop Final Report,

Chen, An ; Meneghini, Matteo ; Van Blerkom, Daniel.. - p. 187-189 , 2013

Link: https://doi.org/10.1109/..

12

(Invited) Charge Trapping and the Negative Bias Temperature..:

Goes, Wolfgang ; Schanovsky, Franz ; Hehenberger, Philipp..
ECS Transactions. 33 (2010) 3 - p. 565-589 , 2010

Link: https://doi.org/10.1149/..

13

Impact of Confinement and Stress on the Subband Parameters ..:

Sverdlov, Viktor A. ; Baumgartner, Oskar ; Windbacher, Thomas..
ECS Transactions. 23 (2009) 1 - p. 389-396 , 2009

Link: https://doi.org/10.1149/..

14

Impact of Confinement of Semiconductor and Band Engineering..:

Sverdlov, Viktor ; Baumgartner, Oskar ; Windbacher, Thomas..
ECS Transactions. 19 (2009) 4 - p. 15-26 , 2009

Link: https://doi.org/10.1149/..

15

Atomistic modeling in the context of the bias temperature i..:

Schanovsky, Franz
https://doi.org/10.34726/hss.2013.28781. , 2021

Link: https://doi.org/10.34726..