I agree that this site is using cookies. You can find further informations
here
.
X
Login
My folder (
0
)
Home
About us
Home About us
Our history
Profile
Press & public relations
Friends
The library in figures
Exhibitions
Projects
Training, internships, careers
Films
Services & Information
Home Services & Information
Lending and interlibrary loans
Returns and renewals
Training and library tours
My Account
Library cards
New to the library?
Download Information
Opening hours
Learning spaces
PC, WLAN, copy, scan and print
Catalogs and collections
Home Catalogs and Collections
Rare books and manuscripts
Digital collections
Subject Areas
Our sites
Home Our sites
Central Library
Law Library (Juridicum)
BB Business and Economics (BB11)
BB Physics and Electrical Engineering
TB Engineering and Social Sciences
TB Economics and Nautical Sciences
TB Music
TB Art & Design
TB Bremerhaven
Contact the library
Home Contact the library
Staff Directory
Open access & publishing
Home Open access & publishing
Reference management: Citavi & RefWorks
Publishing documents
Open Access in Bremen
Show Desktop-Version
Toggle navigation
Schemerov, Ivan V.
12
results:
Search for persons
X
Format
Online (12)
Mediatypes
Articles (Online) (9)
OpenAccess-fulltext (3)
Sorted by: Relevance
Sorted by: Year
?
1
Direct Observation of the Stretching of the Photoinduced Cu..:
Schemerov, Ivan V.
;
Polyakov, Alexander Y.
;
Vasilev, Anton A.
...
ECS Journal of Solid State Science and Technology. 12 (2023) 12 - p. 125004 , 2023
Link:
https://doi.org/10.1149/..
?
2
Contact and contactless porous silicon parameter measuremen..:
Latukhina, Natalya V.
;
Kobeleva, Svetlana P.
;
Rogozhina, G. A.
..
Modern Electronic Materials. 4 (2018) 4 - p. 143-150 , 2018
Link:
https://doi.org/10.3897/..
?
3
Contact and contactless porous silicon parameter measuremen..:
Latukhina, Natalya V
;
Kobeleva, Svetlana P
;
Rogozhina, G. A
..
https://zenodo.org/record/3556117. , 2018
Link:
https://zenodo.org/recor..
?
4
Contact and contactless porous silicon parameter measuremen..:
Latukhina, Natalya V
;
Kobeleva, Svetlana P
;
Rogozhina, G. A
..
info:eu-repo/semantics/altIdentifier/eissn/2452-1779. , 2018
Link:
https://doi.org/10.3897/..
?
5
Contact and contactless porous silicon parameter measuremen..:
Natalya V. Latukhina
;
Svetlana P. Kobeleva
;
G. A. Rogozhina
..
https://moem.pensoft.net/article/39503/download/pdf/. , 2018
Link:
https://doi.org/10.3897/..
?
6
Trap States and Carrier Diffusion in Czochralski (100) Sing..:
Nikolaev, V. I.
;
Polyakov, A. Y.
;
Krymov, V. M.
...
ECS Journal of Solid State Science and Technology. 13 (2024) 1 - p. 015003 , 2024
Link:
https://doi.org/10.1149/..
?
7
Study of the Abnormally High Photocurrent Relaxation Time i..:
Schemerov, I. V.
;
Polyakov, A. Yu.
;
Almaev, A. V.
...
Russian Microelectronics. 52 (2023) 8 - p. 827-834 , 2023
Link:
https://doi.org/10.1134/..
?
8
Electrical Properties, Deep Levels and Luminescence Related..:
Polyakov, A. Y.
;
Smirnov, N. B.
;
Schemerov, I. V.
...
ECS Journal of Solid State Science and Technology. 8 (2019) 7 - p. Q3091-Q3096 , 2019
Link:
https://doi.org/10.1149/..
?
9
On using photoconductivity decay to determine Si free carri..:
Anfimov, I M
;
Anfimov, M V
;
Egorov, D S
...
IOP Conference Series: Materials Science and Engineering. 474 (2019) - p. 012011 , 2019
Link:
https://doi.org/10.1088/..
?
10
Deep traps and persistent photocapacitance in β-(Al0.14 Ga0..:
Polyakov, A. Y.
;
Smirnov, N. B.
;
Schemerov, I. V.
...
Journal of Applied Physics. 125 (2019) 9 - p. , 2019
Link:
https://doi.org/10.1063/..
?
11
On the Problem of Determining the Bulk Lifetime by Photocon..:
Anfimov, I. M.
;
Kobeleva, S. P.
;
Pylnev, A. V.
...
Russian Microelectronics. 46 (2017) 8 - p. 585-590 , 2017
Link:
https://doi.org/10.1134/..
?
12
A device for free-carrier recombination lifetime measuremen..:
Kobeleva, S. P.
;
Anfimov, I. M.
;
Schemerov, I. V.
Instruments and Experimental Techniques. 59 (2016) 3 - p. 420-424 , 2016
Link:
https://doi.org/10.1134/..
1-12