E-LIB Suche - Ergebnisse für: Schulte-Braucks, C.

1

Experimental examination of tunneling paths in SiGe/Si gate..:

Glass, S. ; von den Driesch, N. ; Strangio, S....
Applied Physics Letters. 111 (2017) 26 - p. , 2017

Link: https://doi.org/10.1063/..

2

Oxidation-induced electron barrier enhancement at interface..:

Afanas'ev, V.V. ; Schulte-Braucks, C. ; Wirths, S...
Microelectronic Engineering. 178 (2017) - p. 141-144 , 2017

Link: https://doi.org/10.1016/..

3

Correlation of Bandgap Reduction with Inversion Response in..:

Schulte-Braucks, C. ; Narimani, K. ; Glass, S....
ACS Applied Materials & Interfaces. 9 (2017) 10 - p. 9102-9109 , 2017

Link: https://doi.org/10.1021/..

4

Process modules for GeSn nanoelectronics with high Sn-conte..:

Schulte-Braucks, C. ; Glass, S. ; Hofmann, E....
Solid-State Electronics. 128 (2017) - p. 54-59 , 2017

Link: https://doi.org/10.1016/..

5

Study of GeSn based heterostructures: towards optimized gro..:

Stange, D. ; von den Driesch, N. ; Rainko, D....
Optics Express. 24 (2016) 2 - p. 1358 , 2016

Link: https://doi.org/10.1364/..

6

Low Temperature Deposition of High-k/Metal Gate Stacks on H..:

Schulte-Braucks, C. ; von den Driesch, N. ; Glass, S....
ACS Applied Materials & Interfaces. 8 (2016) 20 - p. 13133-13139 , 2016

Link: https://doi.org/10.1021/..

7

GeSn lasers for monolithic integration on Si:

, In: 2015 IEEE Summer Topicals Meeting Series (SUM),

Buca, D. ; Sigg, H. ; Marzban, B.... - p. 57-58 , 2015

Link: https://doi.org/10.1109/..

8

Negative differential resistance in direct bandgap GeSn p-i..:

Schulte-Braucks, C. ; Stange, D. ; von den Driesch, N....
Applied Physics Letters. 107 (2015) 4 - p. , 2015

Link: https://doi.org/10.1063/..

9

Direct bandgap GeSn microdisk lasers at 2.5 μm for monolith..:

, In: 2015 IEEE International Electron Devices Meeting (IEDM),

Wirths, S. ; Sigg, H. ; Grutzmacher, D.... - p. 2.6.1-2.6.4 , 2015

Link: https://doi.org/10.1109/..

10

Saturation Photo-Voltage Methodology for Semiconductor/Insu..:

Madia, O. ; Afanas'ev, V. V. ; Cott, D....
ECS Journal of Solid State Science and Technology. 5 (2015) 4 - p. P3031-P3036 , 2015

Link: https://doi.org/10.1149/..

11

Investigation of carrier scattering mechanisms in n-Cd1−xMg..:

Pawlak, M. ; Maliński, M. ; Firszt, F....
Infrared Physics & Technology. 64 (2014) - p. 115-118 , 2014

Link: https://doi.org/10.1016/..

12

Experimental examination of tunneling paths in SiGe/Si gate..:

Glass, S ; von den Driesch, N ; Strangio, S...
info:eu-repo/semantics/altIdentifier/wos/WOS:000418947200035. , 2017

Link: http://hdl.handle.net/11..

13

Low Temperature Deposition of High-k/Metal Gate Stacks on H..:

Schulte-Braucks, C ; von den Driesch, N ; Buca, D...
info:eu-repo/semantics/altIdentifier/issn/1944-8252. , 2016

Link: https://juser.fz-juelich..

14

Study of GeSn based heterostructures: towards optimized gro..:

Stange, D ; von den Driesch, N ; Mantl, S...
info:eu-repo/semantics/altIdentifier/issn/1094-4087. , 2016

Link: https://juser.fz-juelich..

15

Negative differential resistance in direct bandgap GeSn p-i..:

Schulte-Braucks, C ; Stange, D ; von den Driesch, N...
info:eu-repo/semantics/altIdentifier/issn/1077-3118. , 2015

Link: https://juser.fz-juelich..