E-LIB Suche - Ergebnisse für: Sciana, Beata

1

Enhancement of quantum cascade laser intersubband transitio..:

Mikulicz, Monika ; rygala, michal ; Smolka, Tristan...
Optics Express. , 2023

Link: https://doi.org/10.1364/..

2

Influence of As-N Interstitial Complexes on Strain Generate..:

Ściana, Beata ; Dawidowski, Wojciech ; Radziewicz, Damian...
Energies. 15 (2022) 9 - p. 3036 , 2022

Link: https://doi.org/10.3390/..

3

Evaluation of Effective Mass in InGaAsN/GaAs Quantum Wells ..:

Stuchlikova, Lubica ; Sciana, Beata ; Kosa, Arpad...
Materials. 15 (2022) 21 - p. 7621 , 2022

Link: https://doi.org/10.3390/..

4

Influence of Annealing Temperature on Emission and Capture ..:

, In: 2022 14th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM),

Benko, Peter ; Kosa, Arpad ; Matus, Matej... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

5

Tunnel junction limited performance of InGaAsN/GaAs tandem ..:

Dawidowski, Wojciech ; Ściana, Beata ; Zborowska-Lindert, Iwona...
Solar Energy. 214 (2021) - p. 632-641 , 2021

Link: https://doi.org/10.1016/..

6

Analysis of Current Transport Mechanism in AP-MOVPE Grown G..:

Dawidowski, Wojciech ; Ściana, Beata ; Bielak, Katarzyna...
Energies. 14 (2021) 15 - p. 4651 , 2021

Link: https://doi.org/10.3390/..

7

Reliability improvement of electrically active defect inves..:

Kosa, Arpad ; Sciana, Beata ; Stuchlikova, Lubica
Journal of Electrical Engineering. 70 (2019) 7 - p. 27-35 , 2019

Link: https://doi.org/10.2478/..

8

DLTS study of InGaAs and GaAsN structures with different in..:

Kosa, Arpad ; Stuchlikova, Lubica ; Harmatha, Ladislav...
Materials Science in Semiconductor Processing. 74 (2018) - p. 313-318 , 2018

Link: https://doi.org/10.1016/..

9

Heat Dissipation Schemes in AlInAs/InGaAs/InP Quantum Casca..:

Pierścińska, Dorota ; Pierściński, Kamil ; Gutowski, Piotr...
Photonics. 4 (2017) 4 - p. 47 , 2017

Link: https://doi.org/10.3390/..

10

A cross‐sectional scanning capacitance microscopy character..:

Szyszka, Adam ; Dawidowski, Wojciech ; Stafiniak, Andrzej...
Crystal Research and Technology. 52 (2017) 6 - p. , 2017

Link: https://doi.org/10.1002/..

11

Epitaxial regrowth of InP/InGaAs heterostructure on pattern..:

Kosior, Łukasz ; Radziewicz, Damian ; Zborowska-Lindert, Iwona...
Materials Science-Poland. 34 (2016) 4 - p. 872-880 , 2016

Link: https://doi.org/10.1515/..

12

The influence of top electrode of InGaAsN/GaAs solar cell o..:

Dawidowski, Wojciech ; Ściana, Beata ; Zborowska-Lindert, Iwona...
Solid-State Electronics. 120 (2016) - p. 13-18 , 2016

Link: https://doi.org/10.1016/..

13

Characterization of deep-level defects in GaNAs/GaAs hetero..:

Gelczuk, Łukasz ; Dąbrowska-Szata, Maria ; Ściana, Beata...
Materials Science-Poland. 34 (2016) 4 - p. 726-734 , 2016

Link: https://doi.org/10.1515/..

14

Electrophysical Properties of GaAs P–I–N Structures for Con..:

Kósa, Arpád ; Mikolášek, Miroslav ; Stuchlíková, Ľubica...
Journal of Electrical Engineering. 67 (2016) 5 - p. 377-382 , 2016

Link: https://doi.org/10.1515/..

15

Influence of GaInNAs/GaAs QWs composition profile on the tr..:

Pucicki, Damian ; Bielak, Katarzyna ; Badura, Mikołaj..
Microelectronic Engineering. 161 (2016) - p. 13-17 , 2016

Link: https://doi.org/10.1016/..