E-LIB Suche - Ergebnisse für: Seelmann-Eggebert, M.

1

Publisher's Note: "X-ray photoelectron spectroscopy study o..:

Zhang, Y. ; Gajjala, G. ; Hofmann, T....
Journal of Applied Physics. 109 (2011) 2 - p. , 2011

Link: https://doi.org/10.1063/..

2

A versatile and cryogenic mHEMT-model including noise:

, In: 2010 IEEE MTT-S International Microwave Symposium,

Seelmann-Eggebert, M. ; Schafer, F. ; Leuther, A.. - p. 1-1 , 2010

Link: https://doi.org/10.1109/..

3

X-ray photoelectron spectroscopy study of the chemical inte..:

Zhang, Y. ; Gajjala, G. ; Hofmann, T....
Journal of Applied Physics. 108 (2010) 9 - p. , 2010

Link: https://doi.org/10.1063/..

4

Design and Analysis of a 34 dBm Ka-Band GaN High Power Ampl..:

, In: 2006 European Microwave Integrated Circuits Conference,

van Heijningen, M. ; van Vliet, F.E. ; van Raay, F.. - p. None , 2006

Link: https://doi.org/10.1109/..

5

Linear broadband GaN MMICs for Ku-band Applications:

, In: 2006 IEEE MTT-S International Microwave Symposium Digest,

Schuh, P. ; Seelmann-Eggebert, M. ; Kiefer, R.... - p. None , 2006

Link: https://doi.org/10.1109/..

6

X-Band High-Power Microstrip AlGaN/GaN HEMT Amplifier MMICs:

, In: 2006 IEEE MTT-S International Microwave Symposium Digest,

van Raay, F. ; Quay, R. ; Kiefer, R.... - p. None , 2006

Link: https://doi.org/10.1109/..

7

Thermisches Management für HF-Leistungsbauelemente

Abschlußbericht ; Projektlaufzeit 01.01.1998 - 31.12.2000

Seelmann-Eggebert, M. ; Koidl, Peter , 2001

Link: http://edok01.tib.uni-ha..

8

Heat-spreading diamond films for GaN-based high-power trans..:

Seelmann-Eggebert, M. ; Meisen, P. ; Schaudel, F....
Diamond and Related Materials. 10 (2001) 3-7 - p. 744-749 , 2001

Link: https://doi.org/10.1016/..

9

Polarity determination for GaN films grown on (0001) sapphi..:

Rouviere, J. L. ; Weyher, J. L. ; Seelmann-Eggebert, M..
Applied Physics Letters. 73 (1998) 5 - p. 668-670 , 1998

Link: https://doi.org/10.1063/..

10

Surface cleaning and etching of CdZnTe and CdTe in H2/Ar, C..:

Keller, Robert C. ; Zimmermann, H. ; Seelmann-Eggebert, M..
Journal of Electronic Materials. 26 (1997) 6 - p. 542-551 , 1997

Link: https://doi.org/10.1007/..

11

Polarity of (00.1) GaN epilayers grown on a (00.1) sapphire:

Seelmann-Eggebert, M. ; Weyher, J. L. ; Obloh, H....
Applied Physics Letters. 71 (1997) 18 - p. 2635-2637 , 1997

Link: https://doi.org/10.1063/..

12

Imaging scatterer planes by photoelectron diffraction:

Seelmann-Eggebert, M.
Surface Science. 377-379 (1997) - p. 1094-1100 , 1997

Link: https://doi.org/10.1016/..

13

Growth of Sn thin films on CdTe(111):

Zimmermann, H. ; Keller, Robert C. ; Meisen, P..
Surface Science. 377-379 (1997) - p. 904-908 , 1997

Link: https://doi.org/10.1016/..

14

Dry etching of Hg1−xCdxTe using CH4/H2/Ar/N2 electron cyclo..:

Keller, Robert C. ; Seelmann-Eggebert, M. ; Richter, H. J.
Journal of Electronic Materials. 25 (1996) 8 - p. 1270-1275 , 1996

Link: https://doi.org/10.1007/..

15

Interface formation between deposited Sn and Hg0.8Cd0.2Te:

Zimmermann, H. ; Keller, Robert C. ; Meisen, P...
Journal of Electronic Materials. 25 (1996) 8 - p. 1293-1299 , 1996

Link: https://doi.org/10.1007/..