E-LIB Suche - Ergebnisse für: Selberherr, S.

1

Field-Free Perpendicular Magnetization Switching of SOT-MRA..:

, In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO),

Pruckner, B. ; Jorstad, N. ; Hadamek, T.... - p. 1584-1589 , 2024

Link: https://doi.org/10.1109/..

2

Influence of Interface Exchange Coupling in Multilayered Sp..:

, In: 2024 47th MIPRO ICT and Electronics Convention (MIPRO),

Bendra, M. ; de Orio, R.L. ; Selberherr, S... - p. 1579-1583 , 2024

Link: https://doi.org/10.1109/..

3

Micromagnetic modeling of double spin-torque magnetic tunne..:

Pruckner, B. ; Fiorentini, S. ; Goes, W...
Physica B: Condensed Matter. 688 (2024) - p. 416124 , 2024

Link: https://doi.org/10.1016/..

4

Microstructural impact on electromigration reliability of g..:

Ceric, H. ; de Orio, R.L. ; Selberherr, S.
Solid-State Electronics. 200 (2023) - p. 108528 , 2023

Link: https://doi.org/10.1016/..

5

The influence of interface effects on the switching behavio..:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics. 201 (2023) - p. 108590 , 2023

Link: https://doi.org/10.1016/..

6

Back-Hopping in Ultra-Scaled MRAM Cells:

, In: 2023 46th MIPRO ICT and Electronics Convention (MIPRO),

Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 159-162 , 2023

Link: https://doi.org/10.23919..

7

Statistical study of electromigration in gold interconnects:

Ceric, H. ; de Orio, R.L. ; Selberherr, S.
Microelectronics Reliability. 147 (2023) - p. 115061 , 2023

Link: https://doi.org/10.1016/..

8

Electromigration-induced void evolution and failure of Cu/S..:

Ceric, H. ; Zahedmanesh, H. ; Croes, K...
Journal of Applied Physics. 133 (2023) 10 - p. , 2023

Link: https://doi.org/10.1063/..

9

A multi-level cell for ultra-scaled STT-MRAM realized by ba..:

Bendra, M. ; Fiorentini, S. ; Selberherr, S...
Solid-State Electronics. 208 (2023) - p. 108738 , 2023

Link: https://doi.org/10.1016/..

10

Comprehensive evaluation of torques in ultra-scaled MRAM de..:

Fiorentini, S. ; Ender, J. ; Selberherr, S....
Solid-State Electronics. 199 (2023) - p. 108491 , 2023

Link: https://doi.org/10.1016/..

11

Interface effects in ultra-scaled MRAM cells:

Bendra, M. ; Fiorentini, S. ; Goes, W...
Solid-State Electronics. 194 (2022) - p. 108373 , 2022

Link: https://doi.org/10.1016/..

12

Electromigration Degradation of Gold Interconnects: A Stati..:

, In: 2022 IEEE International Interconnect Technology Conference (IITC),

Ceric, H. ; de Orio, R. L. ; Selberherr, S. - p. 102-104 , 2022

Link: https://doi.org/10.1109/..

13

Temperature increase in STT-MRAM at writing: A fully three-..:

Hadámek, T. ; Fiorentini, S. ; Bendra, M....
Solid-State Electronics. 193 (2022) - p. 108269 , 2022

Link: https://doi.org/10.1016/..

14

Modeling advanced spintronic based magnetoresistive memory:

, In: International Conference on Microwave & THz Technologies, Wireless Communications and OptoElectronics (IRPhE 2022),

Fiorentini, S. ; Bendra, M. ; Ender, J.... - p. None , 2022

Link: https://doi.org/10.1049/..

15

Spin Transfer Torques in Ultra-Scaled MRAM Cells:

, In: 2022 45th Jubilee International Convention on Information, Communication and Electronic Technology (MIPRO),

Bendra, M. ; Fiorentini, S. ; Ender, J.... - p. 129-132 , 2022

Link: https://doi.org/10.23919..