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Seo, Kwang‐Seok
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1

The Variation of Schottky Barrier Height Induced by the Pha..:

Lee, Sang-Tae ; Kong, Minwoo ; Jang, Hyunchul...
Crystals.  12 (2022)  7 - p. 966 , 2022
Link: https://doi.org/10.3390/..
 
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2

Lg = 50 nm Gate-All-Around In0.53Ga0.47As Nanosheet MOSFETs..:

Lee, In-Geun ; Jo, Hyeon-Bhin ; Baek, Ji-Min...
Electronics.  11 (2022)  17 - p. 2744 , 2022
Link: https://doi.org/10.3390/..
 
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3

Vertical growth characterization of InAs nanowires grown by..:

Song, Chang-Hun ; Kong, Minwoo ; Jang, Hyunchul...
Solid-State Electronics.  175 (2021)  - p. 107939 , 2021
Link: https://doi.org/10.1016/..
 
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4

Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhan..:

Hwang, Il-Hwan ; Kang, Myoung-Jin ; Cha, Ho-Young.
Crystals.  11 (2021)  4 - p. 405 , 2021
Link: https://doi.org/10.3390/..
 
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5

High performance InGaAs channel MOSFETs on highly resistive..:

Lee, Sang Tae ; Lee, In-Geun ; Jang, Hyunchul...
Solid-State Electronics.  176 (2021)  - p. 107940 , 2021
Link: https://doi.org/10.1016/..
 
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6

Low-Damage and Self-Limiting (Al)GaN Etching Process throug..:

Hwang, Il-Hwan ; Cha, Ho-Young ; Seo, Kwang-Seok
Coatings.  11 (2021)  3 - p. 268 , 2021
Link: https://doi.org/10.3390/..
 
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7

The effect of edge-terminated structure for lateral AlGaN/G..:

Ki, Ra-Seong ; Lee, Jea-Gil ; Cha, Ho-Young.
Solid-State Electronics.  166 (2020)  - p. 107768 , 2020
Link: https://doi.org/10.1016/..
 
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8

PECVD SiNx passivation for AlGaN/GaN HFETs with ultra-thin ..:

Kim, Hyun-Seop ; Kang, Myoung-Jin ; Jang, Won-Ho...
Solid-State Electronics.  173 (2020)  - p. 107876 , 2020
Link: https://doi.org/10.1016/..
 
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9

Effects of Recessed-Gate Structure on AlGaN/GaN-on-SiC MIS-..:

Kim, Hyun-Seop ; Kang, Myoung-Jin ; Kim, Jeong Jin..
Materials.  13 (2020)  7 - p. 1538 , 2020
Link: https://doi.org/10.3390/..
 
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10

Development of Catalytic-CVD SiNx Passivation Process for A..:

Kang, Myoung-Jin ; Kim, Hyun-Seop ; Cha, Ho-Young.
Crystals.  10 (2020)  9 - p. 842 , 2020
Link: https://doi.org/10.3390/..
 
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11

Normally-off recessed-gate AlGaN/GaN MOS-HFETs with plasma ..:

Kang, Myoung-Jin ; Eom, Su-Keun ; Kim, Hyun-Seop...
Semiconductor Science and Technology.  34 (2019)  5 - p. 055018 , 2019
Link: https://doi.org/10.1088/..
 
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12

Applying the Quality by Design to Robust Optimization and D..:

Kim, Tae Kyu ; Seo, Kwang‐Seok ; Kwon, Sang‐Oh...
Bulletin of the Korean Chemical Society.  40 (2019)  10 - p. 1002-1012 , 2019
Link: https://doi.org/10.1002/..
 
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13

Characterization of High-Performance InGaAs QW-MOSFETs With..:

Eom, Su-Keun ; Kong, Min-Woo ; Cha, Ho-Young.
IEEE Journal of the Electron Devices Society.  7 (2019)  - p. 908-913 , 2019
Link: https://doi.org/10.1109/..
 
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14

Application of the Quality‐by‐Design (QbD) Approach for Ery..:

Kim, Tae Kyu ; Seo, Kwang‐Seok ; Kwon, Sang‐Oh...
Bulletin of the Korean Chemical Society.  40 (2019)  7 - p. 623-633 , 2019
Link: https://doi.org/10.1002/..
 
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15

Direct Current and Radio Frequency Characterizations of AlG..:

Choi, Uiho ; Kim, Hyun-Seop ; Lee, Kyeongjae...
physica status solidi (a).  217 (2019)  7 - p. , 2019
Link: https://doi.org/10.1002/..
 
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