E-LIB Suche - Ergebnisse für: Shah, Vishal Ajit

1

Design and Optimization of 3.3 kV Silicon Carbide Semi-Supe..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),

Melnyk, Kyrylo ; Renz, Arne Benjamin ; Cao, Qinze... - p. 132-135 , 2024

Link: https://doi.org/10.1109/..

2

High Mobility Silicon Dioxide Layers on 4H-SiC Deposited by..:

Renz, Arne Benjamin ; Cao, Qin Ze ; Vavasour, Oliver James...
Materials Science Forum. 1090 (2023) - p. 147-151 , 2023

Link: https://doi.org/10.4028/..

3

The optimisation, fabrication and comparison of 10 kV-rated..:

, In: 2023 IEEE Energy Conversion Congress and Exposition (ECCE),

Renz, Arne Benjamin ; Dai, Tianxiang ; Antoniou, Marina... - p. 5337-5341 , 2023

Link: https://doi.org/10.1109/..

4

Selective Oxidation during AFM Electrical Characterization ..:

Germanicus, Rosine Coq ; Boumaarouf, Abdelhaq ; Villeneuve-Faure, Christina...
Materials Science Forum. 1089 (2023) - p. 63-69 , 2023

Link: https://doi.org/10.4028/..

5

The Optimization of 3.3 kV 4H-SiC JBS Diodes:

Renz, Arne Benjamin ; Shah, Vishal Ajit ; Vavasour, Oliver James...
IEEE Transactions on Electron Devices. 69 (2022) 1 - p. 298-303 , 2022

Link: https://doi.org/10.1109/..

6

A Study of High Resistivity Semi-Insulating 4H-SiC Epilayer..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Rommel, Mathias...
Materials Science Forum. 1062 (2022) - p. 523-527 , 2022

Link: https://doi.org/10.4028/..

7

Investigations of Short Circuit Robustness of SiC IGBTs wit..:

Zhang, Lu Yang ; Dai, Tian Xiang ; Gammon, Peter Michael...
Materials Science Forum. 1062 (2022) - p. 504-508 , 2022

Link: https://doi.org/10.4028/..

8

The successful implementation of a phosphorous-based surfac..:

, In: 2022 IEEE Workshop on Wide Bandgap Power Devices and Applications in Europe (WiPDA Europe),

Renz, Arne Benjamin ; Clarke Baker, Guy William ; Shah, Vishal Ajit... - p. 1-4 , 2022

Link: https://doi.org/10.1109/..

9

The Improved Reliability Performance of Post-Deposition Ann..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Gammon, Peter Michael...
Materials Science Forum. 1062 (2022) - p. 325-329 , 2022

Link: https://doi.org/10.4028/..

10

A Study of 4H-SiC Semi-Superjunction Rectifiers for Practic..:

Baker, G.W.C. ; Li, Fan ; Dai, Tian Xiang...
Materials Science Forum. 1062 (2022) - p. 514-518 , 2022

Link: https://doi.org/10.4028/..

11

Engineering the Schottky Interface of 3.3 kV SiC JBS Diodes..:

Renz, A. Benjamin ; Vavasour, Oliver James ; Pérez-Tomás, Amador...
Materials Science Forum. 1062 (2022) - p. 190-194 , 2022

Link: https://doi.org/10.4028/..

12

Surface Effects of Passivation within Mo/4H-SiC Schottky Di..:

Renz, A. Benjamin ; Shah, Vishal Ajit ; Vavasour, Oliver James...
Materials Science Forum. 963 (2019) - p. 511-515 , 2019

Link: https://doi.org/10.4028/..

13

Design Optimization of 1.2kV 4H-SiC Trench MOSFET:

Dai, Tian Xiang ; Gammon, Peter Michael ; Shah, Vishal Ajit...
Materials Science Forum. 963 (2019) - p. 605-608 , 2019

Link: https://doi.org/10.4028/..

14

Study of 4H-SiC Superjunction Schottky Rectifiers with Impl..:

Baker, G.W.C. ; Chan, Chun W. ; Dai, Tian Xiang...
Materials Science Forum. 963 (2019) - p. 539-543 , 2019

Link: https://doi.org/10.4028/..

15

Elimination of Microtrenching in Trenches in 4H-Silicon Car..:

Mohammadi, Z. ; Shah, Vishal Ajit ; Jennings, Michael R...
Materials Science Forum. 821-823 (2015) - p. 533-536 , 2015

Link: https://doi.org/10.4028/..