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Shahedipour-Sandvik, Shadi
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Online (71)
Mediatypes
Articles (Online) (70)
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1
Photoluminescence from GaN Implanted with Be and F:
Reshchikov, Michael Alexander
;
Andrieiev, Oleksandr
;
Vorobiov, Mykhailo
...
physica status solidi (b). 260 (2023) 9 - p. , 2023
Link:
https://doi.org/10.1002/..
?
2
Stability of the CNHi Complex and the Blue Luminescence Ban..:
Reshchikov, Michael Alexander
;
Andrieiev, Oleksandr
;
Vorobiov, Mykhailo
...
physica status solidi (b). 258 (2021) 12 - p. , 2021
Link:
https://doi.org/10.1002/..
?
3
Mechanical Analysis of Stretchable AlGaN/GaN High Electron ..:
Tompkins, Randy P.
;
Mahaboob, Isra
;
Shahedipour-Sandvik, Shadi
.
ECS Transactions. 72 (2016) 5 - p. 89-95 , 2016
Link:
https://doi.org/10.1149/..
?
4
Annealing studies of AlN capped, MOCVD grown GaN films:
Derenge, Michael A.
;
Kirchner, Kevin W.
;
Jones, Kenneth A.
..
Solid-State Electronics. 101 (2014) - p. 23-28 , 2014
Link:
https://doi.org/10.1016/..
?
5
Synchrotron X-Ray Topography Characterization of Power Elec..:
Liu, Ya Fei
;
Peng, Hong Yu
;
Chen, Ze Yu
...
Materials Science Forum. 1062 (2022) - p. 351-355 , 2022
Link:
https://doi.org/10.4028/..
?
6
Photoluminescence from Be‐Doped GaN Grown by Metal‐Organic ..:
Reshchikov, Michael Alexander
;
Vorobiov, Mykhailo
;
Andrieiev, Oleksandr
...
physica status solidi (b). 260 (2022) 8 - p. , 2022
Link:
https://doi.org/10.1002/..
?
7
X-ray topography characterization of gallium nitride substr..:
Raghothamachar, Balaji
;
Liu, Yafei
;
Peng, Hongyu
...
Journal of Crystal Growth. 544 (2020) - p. 125709 , 2020
Link:
https://doi.org/10.1016/..
?
8
Design and characterization of GaN p-i-n diodes for betavol..:
Khan, Muhammad R.
;
Smith, Joshua R.
;
Tompkins, Randy P.
...
Solid-State Electronics. 136 (2017) - p. 24-29 , 2017
Link:
https://doi.org/10.1016/..
?
9
Deposition of GaN films on crystalline rare earth oxides by..:
Leathersich, Jeff
;
Arkun, Erdem
;
Clark, Andrew
...
Journal of Crystal Growth. 399 (2014) - p. 49-53 , 2014
Link:
https://doi.org/10.1016/..
?
10
The influence of buffer layer coalescence on stress evoluti..:
Gagnon, Jarod C.
;
Leathersich, Jeffrey M.
;
Shahedipour-Sandvik, Fatemeh (Shadi)
.
Journal of Crystal Growth. 393 (2014) - p. 98-102 , 2014
Link:
https://doi.org/10.1016/..
?
11
Homoepitaxial growth of non-polar AlN crystals using molecu..:
Leathersich, Jeff
;
Suvarna, Puneet
;
Tungare, Mihir
.
Surface Science. 617 (2013) - p. 36-41 , 2013
Link:
https://doi.org/10.1016/..
?
12
HVPE GaN for high power electronic Schottky diodes:
Tompkins, Randy P.
;
Walsh, Timothy A.
;
Derenge, Michael A.
...
Solid-State Electronics. 79 (2013) - p. 238-243 , 2013
Link:
https://doi.org/10.1016/..
?
13
The effect of carbon impurities on lightly doped MOCVD GaN ..:
Tompkins, Randy P.
;
Walsh, Timothy A.
;
Derenge, Michael A.
...
Journal of Materials Research. 26 (2011) 23 - p. 2895-2900 , 2011
Link:
https://doi.org/10.1557/..
?
14
Synchrotron X-ray topography characterization of high quali..:
Liu, Yafei
;
Raghothamachar, Balaji
;
Peng, Hongyu
...
Journal of Crystal Growth. 551 (2020) - p. 125903 , 2020
Link:
https://doi.org/10.1016/..
?
15
MOCVD growth of N-polar GaN on on-axis sapphire substrate: ..:
Marini, Jonathan
;
Leathersich, Jeffrey
;
Mahaboob, Isra
...
Journal of Crystal Growth. 442 (2016) - p. 25-30 , 2016
Link:
https://doi.org/10.1016/..
1-15