E-LIB Suche - Ergebnisse für: Shamakhov, V. V.

1

High-Power Multimode Laser Diodes (λ = 976 nm) Based on Asy..:

Slipchenko, S. O. ; Podoskin, A. A. ; Nikolaev, D. N....
Bulletin of the Lebedev Physics Institute. 50 (2023) S9 - p. S976-S983 , 2023

Link: https://doi.org/10.3103/..

2

Laser Diodes (850 nm) Based on an Asymmetric AlGaAs/GaAs He..:

Podoskin, A. A. ; Shushkanov, I. V. ; Shamakhov, V. V....
Bulletin of the Lebedev Physics Institute. 50 (2023) S5 - p. S513-S519 , 2023

Link: https://doi.org/10.3103/..

3

High-Power Laser Diodes Based on InGaAs(P)/Al(In)GaAs(P)/Ga..:

Slipchenko, S. O. ; Veselov, D. A. ; Zolotarev, V. V....
Bulletin of the Lebedev Physics Institute. 50 (2023) S4 - p. S494-S512 , 2023

Link: https://doi.org/10.3103/..

4

High-power laser diodes with multiplied efficiency based on..:

, In: 2022 International Conference Laser Optics (ICLO),

Slipchenko, S.O. ; Shashkin, I.S. ; Shamakhov, V. V.... - p. 1-1 , 2022

Link: https://doi.org/10.1109/..

5

Light – current characteristics of high-power pulsed semico..:

Gavrina, P.S. ; Podoskin, A.A. ; Fomin, E.V....
Quantum Electronics. 51 (2021) 2 - p. 129-132 , 2021

Link: https://doi.org/10.1070/..

6

Output Optical Power Dynamics of Semiconductor Lasers (1070..:

Shashkin, I. S. ; Leshko, A. Yu. ; Shamakhov, V. V....
Technical Physics Letters. 47 (2021) 5 - p. 368-371 , 2021

Link: https://doi.org/10.1134/..

7

Optical absorption in a waveguide based on an n-type AlGaAs..:

Bobretsova, Yu.K. ; Veselov, D.A. ; Klimov, A.A....
Quantum Electronics. 51 (2021) 11 - p. 987-991 , 2021

Link: https://doi.org/10.1070/..

8

High-Power CW InGaAs/AlGaAs (1070 nm) Lasers with a Broaden..:

Shashkin, I. S. ; Leshko, A. Yu. ; Shamakhov, V. V....
Semiconductors. 55 (2021) 4 - p. 455-459 , 2021

Link: https://doi.org/10.1134/..

9

Laser/heterothyristor hybrid assemblies based on AlGaAs/GaA..:

, In: 2020 International Conference Laser Optics (ICLO),

Slipchenko, S. O. ; Podoskin, A. A. ; Golovin, V. S.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

10

High-power narrow-stripe semiconductor lasers (1060 nm) at ..:

, In: 2020 International Conference Laser Optics (ICLO),

Slipchenko, S. O. ; Shashkin, I. S. ; Leshko, A. Y.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

11

Light Characteristics of Narrow-Stripe High-Power Semicondu..:

Shashkin, I. S. ; Leshko, A. Y. ; Nikolaev, D. N....
Semiconductors. 54 (2020) 4 - p. 484-488 , 2020

Link: https://doi.org/10.1134/..

12

Properties of external-cavity high-power semiconductor lase..:

Podoskin, A. A. ; Golovin, V. S. ; Gavrina, P. S....
Journal of the Optical Society of America B. 37 (2020) 3 - p. 784 , 2020

Link: https://doi.org/10.1364/..

13

Design of semiconductor lasers for generation of high-power..:

, In: 2020 International Conference Laser Optics (ICLO),

Slipchenko, S. O. ; Podoskin, A. A. ; Golovin, V. S.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

14

Study of InGaAs/AlGaAs/GaAs semiconductor lasers with a bur..:

, In: 2020 International Conference Laser Optics (ICLO),

Golovin, V. S. ; Shamakhov, V. V. ; Nikolaev, D. N.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..

15

Laser heterostructures with a broadened MQW waveguide for h..:

, In: 2020 International Conference Laser Optics (ICLO),

Slipchenko, S.O. ; Podoskin, A.A. ; Golovin, V.S.... - p. 1-1 , 2020

Link: https://doi.org/10.1109/..