E-LIB Suche - Ergebnisse für: Sheu, J. K.

1

Mn valence state mediated room temperature ferromagnetism i..:

Wadekar, P.V. ; Chang, C.W. ; Zheng, Y.J....
Applied Surface Science. 473 (2019) - p. 693-698 , 2019

Link: https://doi.org/10.1016/..

2

Extracting elastic properties of an atomically thin interfa..:

Chen, H.-Y. ; Huang, Y.-R. ; Shih, H.-Y....
Applied Physics Letters. 111 (2017) 21 - p. , 2017

Link: https://doi.org/10.1063/..

3

InGaN-based epitaxial films as photoelectrodes for hydrogen..:

Sheu, J.K. ; Liao, P.H. ; Huang, T.C....
Solar Energy Materials and Solar Cells. 166 (2017) - p. 86-90 , 2017

Link: https://doi.org/10.1016/..

4

Photoelectrochemical hydrogen generation with linear gradie..:

Lai, W. C. ; Ma, M. H. ; Lin, B. K....
Optics Express. 22 (2014) S7 - p. A1853 , 2014

Link: https://doi.org/10.1364/..

5

InGaN working electrodes with assisted bias generated from ..:

Liu, Shu-Yen ; Sheu, J. K. ; Lin, Yu-Chuan...
Optics Express. 21 (2013) S6 - p. A991 , 2013

Link: https://doi.org/10.1364/..

6

The impact of number of drugs prescribed on the risk of pot..:

Weng, M.-C. ; Tsai, C.-F. ; Sheu, K.-L....
QJM: An International Journal of Medicine. 106 (2013) 11 - p. 1009-1015 , 2013

Link: https://doi.org/10.1093/..

7

Immersed finger-type indium tin oxide ohmic contacts on p-G..:

Liu, Shu-Yen ; Sheu, J. K. ; Lee, M. L....
Optics Express. 20 (2012) S2 - p. A190 , 2012

Link: https://doi.org/10.1364/..

8

Mn-doped GaN as photoelectrodes for the photoelectrolysis o..:

Liu, Shu-Yen ; Sheu, J. K. ; Lin, Yu-Chuan...
Optics Express. 20 (2012) S5 - p. A678 , 2012

Link: https://doi.org/10.1364/..

9

Influence of modulated fields on the Landau level propertie..:

Ou, Y. C. ; Sheu, J. K. ; Chiu, Y. H...
Physical Review B. 83 (2011) 19 - p. , 2011

Link: https://doi.org/10.1103/..

10

Hydrogen gas generation using n-GaN photoelectrodes with im..:

Liu, Shu-Yen ; Lin, Yu-Chuan ; Ye, Jhao-Cheng...
Optics Express. 19 (2011) S6 - p. A1196 , 2011

Link: https://doi.org/10.1364/..

11

High-performance GaN metal–insulator–semiconductor ultravio..:

Lee, Ming-Lun ; Mue, T. S. ; Huang, F.W...
Optics Express. 19 (2011) 13 - p. 12658 , 2011

Link: https://doi.org/10.1364/..

12

Polarized edge emission from GaN-based light-emitting diode..:

Yan, L. J. ; Sheu, J. K. ; Huang, F. W..
Journal of Applied Physics. 108 (2010) 11 - p. , 2010

Link: https://doi.org/10.1063/..

13

InGaN gallium nitride light-emitting diodes with reflective..:

Tu, S. H. ; Lan, C. J. ; Wang, S. H....
Applied Physics Letters. 96 (2010) 13 - p. , 2010

Link: https://doi.org/10.1063/..

14

Parental Education Predicts Corticostriatal Functionality i..:

Gianaros, P. J. ; Manuck, S. B. ; Sheu, L. K....
Cerebral Cortex. 21 (2010) 4 - p. 896-910 , 2010

Link: https://doi.org/10.1093/..

15

Enhancement of the conversion efficiency of GaN-based photo..:

Yang, C. C. ; Sheu, J. K. ; Liang, Xin-Wei...
Applied Physics Letters. 97 (2010) 2 - p. , 2010

Link: https://doi.org/10.1063/..