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Shibayama, Shigehisa
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1

Layer transfer of epitaxially grown Ge-lattice-matched Si27..:

Maeda, Tatsuro ; Ishii, Hiroyuki ; Chang, Wen Hsin...
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108304 , 2024
Link: https://doi.org/10.1016/..
 
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2

Tensile-strained Ge1−x Snxlayers on Si(001) substrate by so..:

Hiraide, Tatsuma ; Shibayama, Shigehisa ; Kurosawa, Masashi..
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 045505 , 2024
Link: https://doi.org/10.35848..
 
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3

Ge1−Snlayers with x∼0.25 on InP(001) substrate grown by low..:

Shibayama, Shigehisa ; Takagi, Komei ; Sakashita, Mitsuo..
Materials Science in Semiconductor Processing.  176 (2024)  - p. 108302 , 2024
Link: https://doi.org/10.1016/..
 
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4

Lattice-matched growth of high-Sn-content (x∼0.1) Si1−x Snx..:

Fujimoto, Kazuaki ; Kurosawa, Masashi ; Shibayama, Shigehisa..
Applied Physics Express.  16 (2023)  4 - p. 045501 , 2023
Link: https://doi.org/10.35848..
 
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5

Emergence of ferroelectricity in ZrO2 thin films on TiN/Si ..:

Nagano, Jotaro ; Ikeguchi, Shota ; Doi, Takuma...
Materials Science in Semiconductor Processing.  163 (2023)  - p. 107553 , 2023
Link: https://doi.org/10.1016/..
 
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6

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(..:

Matsushita, Keigo ; OHTA, Akio ; Shibayama, Shigehisa...
Japanese Journal of Applied Physics.  , 2023
Link: https://doi.org/10.35848..
 
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7

Self-organized Ge1−x Snxquantum dots formed on insulators a..:

Hashimoto, Kaoru ; Shibayama, Shigehisa ; Asaka, Koji...
Japanese Journal of Applied Physics.  62 (2023)  7 - p. 075506 , 2023
Link: https://doi.org/10.35848..
 
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8

Heteroepitaxial growth of CaGe2 films on high-resistivity S..:

Okada, Kazuya ; Shibayama, Shigehisa ; Sakashita, Mitsuo..
Materials Science in Semiconductor Processing.  161 (2023)  - p. 107462 , 2023
Link: https://doi.org/10.1016/..
 
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9

Interface Structures and Electrical Properties of Micro-Fab..:

Kasahara, Kentaro ; Senga, Kazuki ; Sakashita, Mitsuo..
IEEE Journal of the Electron Devices Society.  10 (2022)  - p. 744-750 , 2022
Link: https://doi.org/10.1109/..
 
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10

Visualization of local strain in 4H-SiC trench metal-oxide-..:

Takeuchi, Wakana ; Kagoshima, Eiji ; Sumitani, Kazushi...
Japanese Journal of Applied Physics.  , 2022
Link: https://doi.org/10.35848..
 
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11

Crystalline and optoelectronic properties of Ge1−x Snx /hig..:

Zhang, Shiyu ; Shibayama, Shigehisa ; Nakatsuka, Osamu
Semiconductor Science and Technology.  38 (2022)  1 - p. 015018 , 2022
Link: https://doi.org/10.1088/..
 
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12

Impact of oxide/4H-SiC interface state density on field-eff..:

Doi, Takuma ; Shibayama, Shigehisa ; Sakashita, Mitsuo...
Japanese Journal of Applied Physics.  61 (2022)  2 - p. 021007 , 2022
Link: https://doi.org/10.35848..
 
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13

Photoluminescence properties of heavily Sb doped Ge1−x Snxa..:

Zhang, Shiyu ; Fukuda, Masahiro ; Jeon, Jihee...
Japanese Journal of Applied Physics.  61 (2021)  SA - p. SA1004 , 2021
Link: https://doi.org/10.35848..
 
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14

Lowering of the Schottky barrier height of metal/n-type 4H-..:

Doi, Takuma ; Shibayama, Shigehisa ; Sakashita, Mitsuo..
Japanese Journal of Applied Physics.  60 (2021)  7 - p. 075503 , 2021
Link: https://doi.org/10.35848..
 
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15

Impact of Wet Annealing on Ferroelectric Phase Formation an..:

Shibayama, Shigehisa ; Nagano, Jotaro ; Asaka, Koji..
ACS Applied Electronic Materials.  3 (2021)  5 - p. 2203-2211 , 2021
Link: https://doi.org/10.1021/..
 
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