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Shiojima, Kenji
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1

Two‐Dimensional Characterization of Au/Ni/Thin Heavily‐Mg‐D..:

Imabayashi, Hiroki ; Yoshimura, Haruto ; Horikiri, Fumimasa...
physica status solidi (b).  , 2024
Link: https://doi.org/10.1002/..
 
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2

Local bandgap narrowing in the forming state of threshold s..:

Shiojima, Kenji ; Kawai, Hiroki ; Kawasumi, Yuto...
Applied Physics Letters.  125 (2024)  2 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

Photoelectrical characterization of heavily doped p-SiC Sch..:

Imabayashi, Hiroki ; Sawazaki, Hitose ; Yoshimura, Haruto..
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 04SP71 , 2024
Link: https://doi.org/10.35848..
 
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4

Preface: Special issue on control of semiconductor interfac..:

Shiojima, Kenji ; Nakatsuka, Osamu ; Kita, Koji..
Materials Science in Semiconductor Processing.  158 (2023)  - p. 107386 , 2023
Link: https://doi.org/10.1016/..
 
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5

(Invited) Characterization of Metal/GaN Schottky Contacts -..:

Shiojima, Kenji
ECS Transactions.  112 (2023)  1 - p. 89-107 , 2023
Link: https://doi.org/10.1149/..
 
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6

Mapping of ultra-high-pressure annealed n-GaN Schottky cont..:

Imabayashi, Hiroki ; Shiojima, Kenji ; Kachi, Tetsu
Materials Science in Semiconductor Processing.  162 (2023)  - p. 107536 , 2023
Link: https://doi.org/10.1016/..
 
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7

Mapping of contactless photoelectrochemical etched GaN Scho..:

Shiojima, Kenji ; Matsuda, Ryo ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics.  61 (2022)  SC - p. SC1059 , 2022
Link: https://doi.org/10.35848..
 
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8

Estimation of uniformity in Schottky contacts between print..:

Shiojima, Kenji ; Kawasumi, Yuto ; Yasui, Yuto..
Japanese Journal of Applied Physics.  61 (2022)  8 - p. 086506 , 2022
Link: https://doi.org/10.35848..
 
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9

Characterization of peripheries of n-GaN Schottky contacts ..:

Imabayashi, Hiroki ; Yasui, Yuto ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics.  62 (2022)  SA - p. SA1012 , 2022
Link: https://doi.org/10.35848..
 
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10

(Invited) Two-Dimensional Characterization of Wide-Bandgap ..:

Shiojima, Kenji
ECS Transactions.  104 (2021)  4 - p. 69-82 , 2021
Link: https://doi.org/10.1149/..
 
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11

Effects of surface treatment and annealing for Au/Ni/n-GaN ..:

Shiojima, Kenji ; Tanaka, Ryo ; Takashima, Shinya..
Japanese Journal of Applied Physics.  60 (2021)  5 - p. 056503 , 2021
Link: https://doi.org/10.35848..
 
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12

Uniformity characterization of SiC, GaN, and α-Ga2O3Schottk..:

Shiojima, Kenji ; Kawasumi, Yuto ; Horikiri, Fumimasa...
Japanese Journal of Applied Physics.  60 (2021)  10 - p. 108003 , 2021
Link: https://doi.org/10.35848..
 
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13

Mapping of photo-electrochemical etched Ni/GaN Schottky con..:

Matsuda, Ryo ; Horikiri, Fumimasa ; Narita, Yoshinobu...
Japanese Journal of Applied Physics.  60 (2021)  SB - p. SBBD12 , 2021
Link: https://doi.org/10.35848..
 
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14

Preface:

Shiojima, Kenji ; Washio, Katsuyoshi ; Miyazaki, Seiichi.
Materials Science in Semiconductor Processing.  123 (2021)  - p. 105580 , 2021
Link: https://doi.org/10.1016/..
 
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15

Mapping of n-GaN Schottky contacts formed on facet-growth s..:

Shiojima, Kenji ; Maeda, Masataka ; Kurihara, Kaori
Semiconductor Science and Technology.  , 2021
Link: https://doi.org/10.1088/..
 
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