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Shluger, A.L.
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1

The Role of Carrier Injection in the Breakdown Mechanism of..:

La Torraca, P. ; Padovani, A. ; Strand, J...
IEEE Electron Device Letters.  45 (2024)  2 - p. 236-239 , 2024
Link: https://doi.org/10.1109/..
 
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2

Materials-to-applications evaluation framework: assessing m..:

, In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Bersuker, G. ; Farmer, J. ; Veksler, D.... - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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3

Energies and structures of Cu/Nb and Cu/W interfaces from d..:

Bodlos, R. ; Fotopoulos, V. ; Spitaler, J...
Materialia.  21 (2022)  - p. 101362 , 2022
Link: https://doi.org/10.1016/..
 
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4

Combining measurements and modeling/simulations analysis to..:

, In: 2022 IEEE International Reliability Physics Symposium (IRPS),
Farmer, J. ; Veksler, D. ; Tang, E.... - p. P36-1-P36-4 , 2022
Link: https://doi.org/10.1109/..
 
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5

Electronic structure: Impurity and defect states in insulat..:

, In: Reference Module in Materials Science and Materials Engineering,
Stoneham, A.M. ; Strand, J. ; Shluger, A.L. , 2022
Link: https://doi.org/10.1016/..
 
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6

Modelling the interactions and diffusion of NO in amorphous..:

Mistry, M V ; Cottom, J ; Patel, K...
Modelling and Simulation in Materials Science and Engineering.  29 (2021)  3 - p. 035008 , 2021
Link: https://doi.org/10.1088/..
 
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7

An oxygen vacancy mediated Ag reduction and nucleation mech..:

Patel, K. ; Cottom, J. ; Bosman, M...
Microelectronics Reliability.  98 (2019)  - p. 144-152 , 2019
Link: https://doi.org/10.1016/..
 
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8

Positronium emission from MgO smoke nanocrystals:

Gurung, L ; Alonso, A M ; Babij, T J...
Journal of Physics B: Atomic, Molecular and Optical Physics.  52 (2019)  10 - p. 105004 , 2019
Link: https://doi.org/10.1088/..
 
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9

Recombination defects at the 4H-SiC/SiO2 interface investig..:

Cottom, J. ; Gruber, G. ; Pobegen, G...
Journal of Applied Physics.  124 (2018)  4 - p. , 2018
Link: https://doi.org/10.1063/..
 
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10

Relation between image charge and potential alignment corre..:

Durrant, T. R. ; Murphy, S. T. ; Watkins, M. B..
The Journal of Chemical Physics.  149 (2018)  2 - p. , 2018
Link: https://doi.org/10.1063/..
 
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11

Identification of oxide defects in semiconductor devices: A..:

Goes, W. ; Wimmer, Y. ; El-Sayed, A.-M....
Microelectronics Reliability.  87 (2018)  - p. 286-320 , 2018
Link: https://doi.org/10.1016/..
 
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12

Intrinsic Resistance Switching in Amorphous Silicon Suboxid..:

Munde, M. S. ; Mehonic, A. ; Ng, W. H....
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
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13

A microscopic mechanism of dielectric breakdown in SiO2 fil..:

Padovani, A. ; Gao, D. Z. ; Shluger, A. L..
Journal of Applied Physics.  121 (2017)  15 - p. , 2017
Link: https://doi.org/10.1063/..
 
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14

Intrinsic resistance switching in amorphous silicon oxide f..:

Mehonic, A. ; Munde, M.S. ; Ng, W.H....
Microelectronic Engineering.  178 (2017)  - p. 98-103 , 2017
Link: https://doi.org/10.1016/..
 
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15

Recombination centers in 4H-SiC investigated by electricall..:

Cottom, J. ; Gruber, G. ; Hadley, P....
Journal of Applied Physics.  119 (2016)  18 - p. , 2016
Link: https://doi.org/10.1063/..
 
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