E-LIB Suche - Ergebnisse für: Shubhakar, K.

1

Statistical modeling of degradation behavior in Split-Gate ..:

Mei, S. ; Luo, L. ; Shubhakar, K...
Solid-State Electronics. 211 (2024) - p. 108817 , 2024

Link: https://doi.org/10.1016/..

2

Reliability and Breakdown Study of Erase Gate Oxide in Spli..:

, In: 2020 IEEE International Reliability Physics Symposium (IRPS),

Luo, L. ; Shubhakar, K. ; Mei, S.... - p. 1-6 , 2020

Link: https://doi.org/10.1109/..

3

3D characterization of hard breakdown in RRAM device:

Mei, S. ; Bosman, M. ; Shubhakar, K....
Microelectronic Engineering. 216 (2019) - p. 111042 , 2019

Link: https://doi.org/10.1016/..

4

Conductive Atomic Force Microscope Study of Bipolar and Thr..:

Ranjan, A. ; Raghavan, N. ; O'Shea, S. J....
Scientific Reports. 8 (2018) 1 - p. , 2018

Link: https://doi.org/10.1038/..

5

Random telegraph noise in 2D hexagonal boron nitride dielec..:

Ranjan, A. ; Puglisi, F. M. ; Raghavan, N....
Applied Physics Letters. 112 (2018) 13 - p. , 2018

Link: https://doi.org/10.1063/..

6

40nm Embedded Self-Aligned Split-Gate Flash Technology for ..:

, In: 2017 IEEE International Memory Workshop (IMW),

Shum, Danny ; Luo, Lai Q. ; Kong, Y.J.... - p. 1-4 , 2017

Link: https://doi.org/10.1109/..

7

Localized characterization of charge transport and random t..:

Thamankar, R. ; Puglisi, F. M. ; Ranjan, A....
Journal of Applied Physics. 122 (2017) 2 - p. , 2017

Link: https://doi.org/10.1063/..

8

Analysis of quantum conductance, read disturb and switching..:

Ranjan, A. ; Raghavan, N. ; Molina, J....
Microelectronics Reliability. 64 (2016) - p. 172-178 , 2016

Link: https://doi.org/10.1016/..

9

Conductive filament formation at grain boundary locations i..:

Shubhakar, K. ; Mei, S. ; Bosman, M....
Microelectronics Reliability. 64 (2016) - p. 204-209 , 2016

Link: https://doi.org/10.1016/..

10

Single vacancy defect spectroscopy on HfO2 using random tel..:

Thamankar, R. ; Raghavan, N. ; Molina, J....
Journal of Applied Physics. 119 (2016) 8 - p. , 2016

Link: https://doi.org/10.1063/..

11

Effects of thermal annealing on the charge localization cha..:

Feng, Xuan ; Dong, Shurong ; Wong, Hei...
Microelectronics Reliability. 61 (2016) - p. 78-81 , 2016

Link: https://doi.org/10.1016/..

12

An SEM/STM based nanoprobing and TEM study of breakdown loc..:

Shubhakar, K. ; Bosman, M. ; Neucheva, O.A....
Microelectronics Reliability. 55 (2015) 9-10 - p. 1450-1455 , 2015

Link: https://doi.org/10.1016/..

13

Impact of local structural and electrical properties of gra..:

Shubhakar, K. ; Raghavan, N. ; Kushvaha, S.S....
Microelectronics Reliability. 54 (2014) 9-10 - p. 1712-1717 , 2014

Link: https://doi.org/10.1016/..

14

Grain boundary assisted degradation and breakdown study in ..:

Shubhakar, K. ; Pey, K. L. ; Kushvaha, S. S....
Applied Physics Letters. 98 (2011) 7 - p. , 2011

Link: https://doi.org/10.1063/..

15

Necessity for quantum mechanical simulation for the future ..:

, In: 2007 International Workshop on Physics of Semiconductor Devices,

Ray, Biswajit ; Shubhakar, K. ; Mahapatra, Santanu - p. None , 2007

Link: https://doi.org/10.1109/..