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Siekacz, M.
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1

Influence of GaN substrate miscut on the XRD quantification..:

Moneta, J. ; Kryśko, M. ; Domagala, J.Z....
Acta Materialia.  276 (2024)  - p. 120082 , 2024
Link: https://doi.org/10.1016/..
 
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2

Ion implantation of tunnel junction as a method for definin..:

Slawinska, J. ; Muziol, G. ; Siekacz, M....
Optics Express.  30 (2022)  15 - p. 27004 , 2022
Link: https://doi.org/10.1364/..
 
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3

GaN-based bipolar cascade lasers with 25 nm wide quantum we..:

Piprek, Joachim ; Muziol, G. ; Siekacz, M..
Optical and Quantum Electronics.  54 (2022)  1 - p. , 2022
Link: https://doi.org/10.1007/..
 
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4

Tunnel Junctions with a Doped (In,Ga)N Quantum Well for Ver..:

Żak, M. ; Muziol, G. ; Turski, H....
Physical Review Applied.  15 (2021)  2 - p. , 2021
Link: https://doi.org/10.1103/..
 
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5

III-nitride optoelectronic devices containing wide quantum ..:

Muziol, G. ; Hajdel, M. ; Siekacz, M....
Japanese Journal of Applied Physics.  61 (2021)  SA - p. SA0801 , 2021
Link: https://doi.org/10.35848..
 
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6

Distributed-feedback blue laser diode utilizing a tunnel ju..:

Muziol, G. ; Hajdel, M. ; Turski, H....
Optics Express.  28 (2020)  23 - p. 35321 , 2020
Link: https://doi.org/10.1364/..
 
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7

Influence of strain on the indium incorporation in (0001) G..:

Schulz, T. ; Lymperakis, L. ; Anikeeva, M....
Physical Review Materials.  4 (2020)  7 - p. , 2020
Link: https://doi.org/10.1103/..
 
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8

Extremely long lifetime of III-nitride laser diodes grown b..:

Muziol, G. ; Siekacz, M. ; Nowakowski-Szkudlarek, K....
Materials Science in Semiconductor Processing.  91 (2019)  - p. 387-391 , 2019
Link: https://doi.org/10.1016/..
 
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9

Stack of two III-nitride laser diodes interconnected by a t..:

Siekacz, M. ; Muziol, G. ; Hajdel, M....
Optics Express.  27 (2019)  4 - p. 5784 , 2019
Link: https://doi.org/10.1364/..
 
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10

MBE of III-Nitride Heterostructures for Optoelectronic Devi..:

, In: Molecular Beam Epitaxy,
Skierbiszewski, C. ; Muziol, G. ; Turski, H.... - p. 191-209 , 2019
Link: https://doi.org/10.1002/..
 
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11

Tunnel junctions for vertically integrated multiple nitride..:

, In: 2019 Device Research Conference (DRC),
Siekacz, M. ; Muziol, G. ; Turski, H.... - p. 75-76 , 2019
Link: https://doi.org/10.1109/..
 
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12

Peculiarities of plastic relaxation of (0001) InGaN epilaye..:

Moneta, J. ; Siekacz, M. ; Grzanka, E....
Applied Physics Letters.  113 (2018)  3 - p. , 2018
Link: https://doi.org/10.1063/..
 
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13

Dependence of indium content in monolayer-thick InGaN quant..:

Wolny, P. ; Anikeeva, M. ; Sawicka, M....
Journal of Applied Physics.  124 (2018)  6 - p. , 2018
Link: https://doi.org/10.1063/..
 
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14

Erratum: "Theoretical and experimental studies of electric ..:

Gladysiewicz, M. ; Janicki, L. ; Siekacz, M....
Applied Physics Letters.  113 (2018)  9 - p. , 2018
Link: https://doi.org/10.1063/..
 
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15

Elastically frustrated rehybridization: Origin of chemical ..:

Lymperakis, L. ; Schulz, T. ; Freysoldt, C....
Physical Review Materials.  2 (2018)  1 - p. , 2018
Link: https://doi.org/10.1103/..
 
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