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Sklénard, Benoît
71
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Online (71)
Mediatypes
Articles (Online) (22)
Bookchapter (Online) (2)
OpenAccess-fulltext (47)
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1
Atomistic description of Si etching with HCl:
Martinez, Biel
;
Li, Jing
;
Prats, Hector
.
Applied Surface Science. 657 (2024) - p. 159836 , 2024
Link:
https://doi.org/10.1016/..
?
2
Equivariant graph neural network interatomic potential for ..:
Lee, Sung-Ho
;
Li, Jing
;
Olevano, Valerio
.
Physical Review Materials. 8 (2024) 3 - p. , 2024
Link:
https://doi.org/10.1103/..
?
3
Exploring charge hopping transport in amorphous HfO2: An ap..:
Hirchaou, Youssef
;
Sklénard, Benoît
;
Goes, Wolfgang
...
Applied Physics Letters. 124 (2024) 5 - p. , 2024
Link:
https://doi.org/10.1063/..
?
4
Improving the tight-binding description of spin-orbit inter..:
, In:
2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
,
Veste, Gaetan
;
Rodriguez-Mena, Esteban A.
;
Martinez, Biel
... - p. 345-348 , 2023
Link:
https://doi.org/10.23919..
?
5
Oxygen vacancy and hydrogen in amorphous HfO2:
Sklénard, Benoît
;
Cvitkovich, Lukas
;
Waldhoer, Dominic
.
Journal of Physics D: Applied Physics. , 2023
Link:
https://doi.org/10.1088/..
?
6
XPS Core-Level Chemical Shift by Ab Initio Many-Body Theory:
Mukatayev, Iskander
;
Moevus, Florient
;
Sklénard, Benoît
..
The Journal of Physical Chemistry A. 127 (2023) 7 - p. 1642-1648 , 2023
Link:
https://doi.org/10.1021/..
?
7
A generalizable, uncertainty-aware neural network potential..:
Lee, Sung-Ho
;
Olevano, Valerio
;
Sklénard, Benoit
Solid-State Electronics. 199 (2023) - p. 108508 , 2023
Link:
https://doi.org/10.1016/..
?
8
Ab initio study of electron mobility in V2O5 via polaron ho..:
Defrance, Remi
;
Sklénard, Benoit
;
Guillaumont, Marc
..
Solid-State Electronics. 198 (2022) - p. 108455 , 2022
Link:
https://doi.org/10.1016/..
?
9
Size and Solvation Effects on Electronic and Optical Proper..:
Sklénard, Benoît
;
Mugny, Gabriel
;
Chehaibou, Bilal
...
The Journal of Physical Chemistry Letters. 13 (2022) 39 - p. 9044-9050 , 2022
Link:
https://doi.org/10.1021/..
?
10
Impact of hydrogen coverage on silane adsorption during Si ..:
Treps, Laureline
;
Li, Jing
;
Sklénard, Benoit
Solid-State Electronics. 197 (2022) - p. 108441 , 2022
Link:
https://doi.org/10.1016/..
?
11
Electronic and thermal properties of GeTe/Sb2Te3 superlatti..:
Sklénard, Benoît
;
Triozon, François
;
Sabbione, Chiara
...
Applied Physics Letters. 119 (2021) 20 - p. , 2021
Link:
https://doi.org/10.1063/..
?
12
Quantitative Mapping of the Charge Density in a Monolayer o..:
Boureau, Victor
;
Sklenard, Benoit
;
McLeod, Robert
...
ACS Nano. 14 (2019) 1 - p. 524-530 , 2019
Link:
https://doi.org/10.1021/..
?
13
Hybrid‐RRAM toward Next Generation of Nonvolatile Memory: C..:
Sassine, Gilbert
;
Nail, Cécile
;
Blaise, Philippe
...
Advanced Electronic Materials. 5 (2018) 2 - p. , 2018
Link:
https://doi.org/10.1002/..
?
14
Optical vs electronic gap of hafnia by ab initio Bethe-Salp..:
Sklénard, Benoît
;
Dragoni, Alberto
;
Triozon, François
.
Applied Physics Letters. 113 (2018) 17 - p. , 2018
Link:
https://doi.org/10.1063/..
?
15
(Invited) Resistive RAM Memories from a Material Perspectiv..:
Blaise, Philippe
;
Sklenard, Benoit
;
Traore, Boubacar
...
ECS Transactions. 75 (2017) 32 - p. 25-28 , 2017
Link:
https://doi.org/10.1149/..
1-15