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Smets, Q.
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1

Rectal perforation after laser hemorrhoidoplasty: a case re..:

Smets, Q. ; Gaillard, M. ; Van de Weijer, M..
Techniques in Coloproctology.  28 (2024)  1 - p. , 2024
Link: https://doi.org/10.1007/..
 
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2

Process implications on the stability and reliability of 30..:

Illarionov, Yu. Yu. ; Karl, A. ; Smets, Q....
npj 2D Materials and Applications.  8 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
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3

Impact of gate stack processing on the hysteresis of 300 mm..:

, In: 2023 IEEE International Reliability Physics Symposium (IRPS),
Panarella, L. ; Kaczer, B. ; Smets, Q.... - p. 1-6 , 2023
Link: https://doi.org/10.1109/..
 
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4

Towards low damage and fab-compatible top-contacts in MX2 t..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Kundu, S. ; van Dorp, D. H. ; Schram, T.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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5

Integration of epitaxial monolayer MX₂ channels on 300mm wa..:

, In: 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),
Ghosh, S. ; Smets, Q. ; Banerjee, S.... - p. 1-2 , 2023
Link: https://doi.org/10.23919..
 
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6

Exploring manufacturability of novel 2D channel materials: ..:

, In: 2023 International Electron Devices Meeting (IEDM),
Dorow, C. J. ; Schram, T. ; Smets, Q.... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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7

Analysis of BTI in 300 mm integrated dual-gate WS2 FETs:

, In: 2022 Device Research Conference (DRC),
Panarella, L. ; Smets, Q. ; Verreck, D.... - p. 1-2 , 2022
Link: https://doi.org/10.1109/..
 
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8

Understanding and modelling the PBTI reliability of thin-fi..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Chasin, A. ; Franco, J. ; Triantopoulos, K.... - p. 31.1.1-31.1.4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Scaled transistors with 2D materials from the 300mm fab:

, In: 2020 IEEE Silicon Nanoelectronics Workshop (SNW),
Asselberghs, I. ; Schram, T. ; Smets, Q.... - p. 67-68 , 2020
Link: https://doi.org/10.1109/..
 
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10

Tunnel FETs using Phosphorene/ReS2 heterostructures:

, In: 2019 Device Research Conference (DRC),
Balaji, Y. ; Smets, Q. ; Lin, D.... - p. 113-114 , 2019
Link: https://doi.org/10.1109/..
 
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11

Experimental calibration of the temperature dependence of t..:

, In: 2019 Device Research Conference (DRC),
Bizindavyi, J. ; Verhulst, A. S. ; Smets, Q... - p. 253-254 , 2019
Link: https://doi.org/10.1109/..
 
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12

Impact of band to band tunneling in In0.53Ga0.47As tunnel d..:

Gupta, S. ; Simoen, E. ; Loo, R....
Applied Physics Letters.  113 (2018)  23 - p. , 2018
Link: https://doi.org/10.1063/..
 
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13

Analog parameters of solid source Zn diffusion InXGa1−XAs n..:

Bordallo, C ; Martino, J A ; Agopian, P G D...
Semiconductor Science and Technology.  31 (2016)  12 - p. 124001 , 2016
Link: https://doi.org/10.1088/..
 
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14

Staggered band gap n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diod..:

El Kazzi, S. ; Smets, Q. ; Ezzedini, M....
Journal of Crystal Growth.  424 (2015)  - p. 62-67 , 2015
Link: https://doi.org/10.1016/..
 
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15

Analog parameters of solid source Zn diffusion in X Ga1-XAs..:

Bordallo, C ; Martino, J. A ; Agopian, P. G.D...
Semiconductor Science and Technology.  , 2016
Link: http://hdl.handle.net/11..
 
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