Smets, Quentin
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2

The Impact of IGZO Channel Composition on DRAM Transistor P..:

Kruv, Anastasiia ; Van Setten, M. J. ; Dekkers, Hendrik F. W....
IEEE Transactions on Electron Devices.  70 (2023)  9 - p. 4674-4679 , 2023
 
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3

Overview of scalable transfer approaches to enable epitaxia..:

, In: 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT),
Brems, Steven ; Ghosh, Souvik ; Smets, Quentin... - p. 1-2 , 2023
 
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4

The Promise of 2-D Materials for Scaled Digital and Analog ..:

, In: 2023 IEEE International Solid- State Circuits Conference (ISSCC),
 
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5

Wafer scale integration of $\mathbf{MX}_{2}$ based NMOS onl..:

, In: 2022 IEEE Silicon Nanoelectronics Workshop (SNW),
 
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7

Superior electrostatic control in uniform monolayer MoS2 sc..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Shi, Yuanyuan ; Groven, Benjamin ; Smets, Quentin... - p. 37.1.1-37.1.4 , 2021
 
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8

Scaling of double-gated WS2 FETs to sub-5nm physical gate l..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Smets, Quentin ; Schram, Tom ; Verreck, Devin... - p. 34.2.1-34.2.4 , 2021
 
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11

Dual gate synthetic MoS2 MOSFETs with 4.56µF/cm2 channel ca..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Wu, Xiangyu ; Cott, Daire ; Lin, Zaoyang... - p. 7.4.1-7.4.4 , 2021
 
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13

Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and..:

, In: 2019 IEEE International Electron Devices Meeting (IEDM),
Smets, Quentin ; Groven, Benjamin ; Caymax, Matty... - p. 23.2.1-23.2.4 , 2019
 
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