E-LIB Suche - Ergebnisse für: Souza, Joel Pereira de

1

Spatial separation of vacancy and interstitial defects form..:

Danilov, Iuri ; Boudinov, Henri Ivanov ; Souza, Joel Pereira de.
Journal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p.. , 2005

Link: http://hdl.handle.net/10..

2

Spatial separation of vacancy and interstitial defects form..:

Danilov, Iuri ; Boudinov, Henri Ivanov ; Souza, Joel Pereira de.
Journal of applied physics. Vol. 97, no. 7 (Apr. 2005), 076106 3p.. , 2005

Link: http://hdl.handle.net/10..

3

Amorphization/recrystallization of buried amorphous silicon..:

Souza, Joel Pereira de ; Cima, Carlos Alberto ; Fichtner, Paulo Fernando Papaleo.
Journal of applied physics. Vol. 95, no. 3 (Feb. 2004), p. 877-880. , 2004

Link: http://hdl.handle.net/10..

4

Electrical resistivity of acceptor carbon in GaAs:

Silva, Antonio Ferreira da ; Pepe, I ; Sernelius, Bo E...
Journal of applied physics. Vol. 95, no. 5 (Mar. 2004), p. 2532-2535. , 2004

Link: http://hdl.handle.net/10..

5

Electrical resistivity of acceptor carbon in GaAs:

Silva, Antonio Ferreira da ; Pepe, I ; Sernelius, Bo E...
Journal of applied physics. Vol. 95, no. 5 (Mar. 2004), p. 2532-2535. , 2004

Link: http://hdl.handle.net/10..

6

Amorphization/recrystallization of buried amorphous silicon..:

Souza, Joel Pereira de ; Cima, Carlos Alberto ; Fichtner, Paulo Fernando Papaleo.
Journal of applied physics. Vol. 95, no. 3 (Feb. 2004), p. 877-880. , 2004

Link: http://hdl.handle.net/10..

7

Electrical isolation of InGaP by proton and helium ion irra..:

Danilov, Iuri ; Souza, Joel Pereira de ; Boudinov, Henri Ivanov..
Journal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265. , 2002

Link: http://hdl.handle.net/10..

8

Electrical isolation of InGaP by proton and helium ion irra..:

Danilov, Iuri ; Souza, Joel Pereira de ; Boudinov, Henri Ivanov..
Journal of applied physics. Melville. Vol. 92, no. 8 (Oct. 2002), p. 4261-4265. , 2002

Link: http://hdl.handle.net/10..

9

Electrical isolation of p-type GaAs layers by ion irradiati..:

Boudinov, Henri Ivanov ; Coelho, Artur Vicente Pfeifer ; Souza, Joel Pereira de
Journal of applied physics. Melville. Vol. 91, no. 10 (May 2002), p. 6585-6587. , 2002

Link: http://hdl.handle.net/10..

10

Electrical isolation of p-type GaAs layers by ion irradiati..:

Boudinov, Henri Ivanov ; Coelho, Artur Vicente Pfeifer ; Souza, Joel Pereira de
Journal of applied physics. Melville. Vol. 91, no. 10 (May 2002), p. 6585-6587. , 2002

Link: http://hdl.handle.net/10..

11

Estudo da implantação de As a baixas energias em Si e SIMOX:

Dalponte, Mateus ; Souza, Joel Pereira de ; Boudinov, Henri Ivanov
Salão de Iniciação Científica (14. : 2002 : Porto Alegre). Livro de resumos. Porto Alegre : UFRGS, 2002.. , 2002

Link: http://hdl.handle.net/10..

12

Estudo da implantação de As a baixas energias em Si e SIMOX:

Dalponte, Mateus ; Souza, Joel Pereira de ; Boudinov, Henri Ivanov
Salão de Iniciação Científica (14. : 2002 : Porto Alegre). Livro de resumos. Porto Alegre : UFRGS, 2002.. , 2002

Link: http://hdl.handle.net/10..

13

Implantação de baixa energia de Sb em cristais de Si:

Dalponte, Mateus ; Souza, Joel Pereira de
Salão de Iniciação Científica (13. : 2001 : Porto Alegre). Livro de resumos. Porto Alegre : UFRGS, 2001.. , 2001

Link: http://hdl.handle.net/10..

14

Mechanical strain and damage in Si implanted with O and N i..:

Souza, Joel Pereira de ; Suprun-Belevich, Yu ; Boudinov, Henri Ivanov.
Journal of applied physics. Melville. Vol. 89, no. 1 (Jan. 2001), p. 42-46. , 2001

Link: http://hdl.handle.net/10..

15

Electrical activation of carbon in GaAs : implantation temp..:

Danilov, Iuri ; Souza, Joel Pereira de ; Murel, A.V.
Applied physics letters. Melville. Vol. 78, no. 12 (Mar. 2001), p. 1700-1702. , 2001

Link: http://hdl.handle.net/10..