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Stanojevic, Z.
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1

Modeling the Operation of Charge Trap Flash Memory–Part I: ..:

Schanovsky, F. ; Verreck, D. ; Stanojević, Z....
IEEE Transactions on Electron Devices.  71 (2024)  1 - p. 547-553 , 2024
Link: https://doi.org/10.1109/..
 
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2

Compact Metal-Ferroelectric-Insulator-Semiconductor (MFIS) ..:

, In: 2023 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Thesberg, M. ; Schanovsky, F. ; Stanojevic, Z... - p. 117-120 , 2023
Link: https://doi.org/10.23919..
 
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3

Monolithic TCAD simulation of phase-change memory (PCM/PRAM..:

Thesberg, M. ; Stanojevic, Z. ; Baumgartner, O....
Solid-State Electronics.  199 (2023)  - p. 108504 , 2023
Link: https://doi.org/10.1016/..
 
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4

A Study of the Variability and Design Considerations of Fer..:

, In: ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC),
Thesberg, M. ; Schanovsky, F. ; Stanojevic, Z... - p. 77-80 , 2023
Link: https://doi.org/10.1109/..
 
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5

From Si to MoS2 – Device Simulation Based on the Direct Sol..:

, In: 2023 IEEE Nanotechnology Materials and Devices Conference (NMDC),
Stanojevic, Z. ; Tsai, C.-M. ; Gonzalez Medina, J. M... - p. 896-898 , 2023
Link: https://doi.org/10.1109/..
 
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6

Modelling of vertical and ferroelectric junctionless techno..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Maneux, C. ; Mukherjee, C. ; Deng, M.... - p. 15.6.1-15.6.4 , 2021
Link: https://doi.org/10.1109/..
 
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7

Understanding the ISPP Slope in Charge Trap Flash Memory an..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),
Verreck, D. ; Arreghini, A. ; Schanovsky, F.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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8

A TCAD Compatible SONOS Trapping Layer Model for Accurate P..:

, In: 2021 IEEE International Memory Workshop (IMW),
Schanovsky, F. ; Verreck, D. ; Arreghini, A.... - p. 1-4 , 2021
Link: https://doi.org/10.1109/..
 
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9

Performance and Leakage Analysis of Si and Ge NWFETs Using ..:

, In: 2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Stanojevic, Z. ; Strof, G. ; Baumgartner, O... - p. 63-66 , 2020
Link: https://doi.org/10.23919..
 
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10

3D TCAD Model for Poly-Si Channel Current and Variability i..:

, In: 2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD),
Verreck, D. ; Arreghini, A. ; Schanovsky, F.... - p. 1-4 , 2019
Link: https://doi.org/10.1109/..
 
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11

TCAD-based characterization of logic cells: Power, performa..:

, In: 2017 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Karner, H.W. ; Kernstock, C. ; Stanojevic, Z.... - p. 1-2 , 2017
Link: https://doi.org/10.1109/..
 
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12

Graphene quantum dots show protective effect on a model of ..:

Tošić, J. ; Vidičević, S. ; Stanojević, Z....
European Neuropsychopharmacology.  26 (2016)  - p. S211-S212 , 2016
Link: https://doi.org/10.1016/..
 
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13

The in vivo and in vitro protective role of arylpiperazine ..:

Stanojevic, Z. ; Tošić, J. ; Vidičević, S....
European Neuropsychopharmacology.  26 (2016)  - p. S258 , 2016
Link: https://doi.org/10.1016/..
 
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14

Activity, but not mRNA expression of gelatinases correlates..:

Petković, F. ; Živanović, J. ; Blaževski, J....
Neuroscience.  292 (2015)  - p. 1-12 , 2015
Link: https://doi.org/10.1016/..
 
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15

P.1.g.027 Effects of traumatic exposure on corticosterone l..:

Starcevic, A. ; Petricevic, S. ; Radojicic, Z....
European Neuropsychopharmacology.  24 (2014)  - p. S218 , 2014
Link: https://doi.org/10.1016/..
 
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