Stempitsky, V.
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1

Mobility of a two-dimensional electron gas in the AlGaN/GaN..:

Volcheck, V ; Stempitsky, V
Journal of Physics: Conference Series.  1410 (2019)  1 - p. 012200 , 2019
 
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2

Verilog-A based compact model of the silicon hall element:

, In: 2017 7th International Conference on Integrated Circuits, Design, and Verification (ICDV),
 
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5

Spin splitting in band structures of BiTeX (X=Cl, Br, I) mo..:

Hvazdouski, D C ; Baranava, M S ; Stempitsky, V R
IOP Conference Series: Materials Science and Engineering.  347 (2018)  - p. 012017 , 2018
 
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6

Suppression of the self-heating effect in GaN HEMT by few-l..:

Volcheck, V S ; Stempitsky, V R
Journal of Physics: Conference Series.  917 (2017)  - p. 082015 , 2017
 
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7

Electronic properties of graphene-based heterostructures:

Skachkova, V A ; Baranava, M S ; Hvazdouski, D C.
Journal of Physics: Conference Series.  917 (2017)  - p. 092012 , 2017
 
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10

Investigation of electric and magnetic characteristics of h..:

Stempitsky V. R ; Dao Dinh Ha
http://www.tkea.com.ua/tkea/2017/1-2_2017/pdf/05.pdf.  , 2017
 
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