Stempitsky, Viktor
20  results:
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2

The impacts of localized backside etching on proton radiati..:

Zhao, Biyao ; Bi, Jinshun ; Ma, Yue...
Japanese Journal of Applied Physics.  62 (2023)  2 - p. 020905 , 2023
 
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4

DC, AC and Breakdown Simulation of the Gallium Nitride High..:

, In: 2022 International Conference on Advanced Technologies for Communications (ATC),
 
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5

Localized Backside Etching Structure of SOI Substrates on T..:

Zhao, Biyao ; Bi, Jinshun ; Ma, Yue...
IEEE Transactions on Electron Devices.  69 (2022)  5 - p. 2256-2261 , 2022
 
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6

Computer simulation of the operational characteristics of a..:

Dao, Ha Dinh ; Lovshenko, Ivan ; Roshchenko, Polina...
Semiconductor Science and Technology.  36 (2021)  9 - p. 095004 , 2021
 
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7

GaN HEMT Thermal Characteristics Evaluation Using an Integr..:

, In: 2020 International Conference on Advanced Technologies for Communications (ATC),
 
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8

Iron-Induced Acceptor Centers in the Gallium Nitride High E..:

, In: 2019 International Conference on Advanced Technologies for Communications (ATC),
 
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10

Simulation of the Heavy Charged Particle Impacts on Electri..:

, In: 2019 International Conference on Advanced Technologies for Communications (ATC),
 
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14

Effects of Charge Trapping on Memory Characteristics for Hf..:

Wang, Jianjian ; Bi, Jinshun ; Xu, Yannan...
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC9959327/.  , 2023
 
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15

Physic-topological (electrical) model of a junction field e..:

Lovshenko Ivan ; Khanko Veranika ; Stempitsky Viktor
https://www.itm-conferences.org/articles/itmconf/pdf/2019/07/itmconf_crimico2019_10002.pdf.  , 2019
 
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