E-LIB Suche - Ergebnisse für: Stesmans, A.

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Physica status solidi / A

Volume 110, Number 2, December 16 Physica status solidi / A ; Volume 110, Number 2

Alboknóz, J. G. ; Aleksandrov, O. V. ; Ameziane, A.... - Reprint 2021 . , 2022

Link: https://doi.org/10.1515/..

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Physica status solidi

Volume 110, Number 2: December 16 Physica status solidi ; Volume 110, Number 2, A

Albornóz, J. G ; Aleksandrov, O. V ; Ameziahe, A... - Reprint 2021 . , [2021]

Link: https://doi.org/10.1515/..

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Internal photoemission of electrons from 2D semiconductor/3..:

Shlyakhov, I ; Achra, S ; Bosman, N...
Journal of Physics D: Applied Physics. 54 (2021) 29 - p. 295101 , 2021

Link: https://doi.org/10.1088/..

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Structural and electronic rearrangement in ovonic switching..:

Konashuk, A.S. ; Filatova, E.O. ; Sokolov, A.A....
Solid-State Electronics. 186 (2021) - p. 108084 , 2021

Link: https://doi.org/10.1016/..

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Measurement of direct and indirect bandgaps in synthetic ul..:

Shlyakhov, I. ; Iakoubovskii, K. ; Banerjee, S....
Journal of Applied Physics. 129 (2021) 15 - p. , 2021

Link: https://doi.org/10.1063/..

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Investigation of Paramagnetic Defects in SiCN and SiCO-base..:

, In: 2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC),

Peng, L. ; Kim, S-W ; Iacovo, S.... - p. 464-467 , 2020

Link: https://doi.org/10.1109/..

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Analysis of Transferred MoS2 Layers Grown by MOCVD: Evidenc..:

Schoenaers, B. ; Leonhardt, A. ; Mehta, A. N....
ECS Journal of Solid State Science and Technology. 9 (2020) 9 - p. 093001 , 2020

Link: https://doi.org/10.1149/..

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Doping-induced ferromagnetism in InSe and SnO monolayers:

Houssa, M. ; Meng, R. ; Iordanidou, K....
Journal of Computational Electronics. 20 (2020) 1 - p. 88-94 , 2020

Link: https://doi.org/10.1007/..

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A Deep Level Transient Spectroscopy Study of Hole Traps in ..:

Hsu, P.-C. ; Simoen, E. ; Lin, D....
ECS Journal of Solid State Science and Technology. 9 (2020) 4 - p. 044006 , 2020

Link: https://doi.org/10.1149/..

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Variations of paramagnetic defects and dopants in geo-MoS2 ..:

Stesmans, A. ; Schoenaers, B. ; Afanas'ev, V. V.
The Journal of Chemical Physics. 152 (2020) 23 - p. , 2020

Link: https://doi.org/10.1063/..

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Dangling bond defects in silicon-passivated strained-Si1−xG..:

Madia, O. ; Kepa, J. ; Afanas'ev, V. V....
Journal of Materials Science: Materials in Electronics. 31 (2019) 1 - p. 75-79 , 2019

Link: https://doi.org/10.1007/..

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Determination of energy thresholds of electron excitations ..:

Afanas'ev, V.V. ; Schubert, J. ; Neft, A....
Microelectronic Engineering. 215 (2019) - p. 110992 , 2019

Link: https://doi.org/10.1016/..

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Thermal stability and temperature dependent electron spin r..:

Schoenaers, B ; Stesmans, A ; Afanas'ev, V V
Semiconductor Science and Technology. 34 (2019) 3 - p. 035022 , 2019

Link: https://doi.org/10.1088/..

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Contact resistance at graphene/MoS2 lateral heterostructure:

Houssa, M. ; Iordanidou, K. ; Dabral, A....
Applied Physics Letters. 114 (2019) 16 - p. , 2019

Link: https://doi.org/10.1063/..

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Hole-Doped 2D InSe for Spintronic Applications:

Iordanidou, K. ; Houssa, M. ; Kioseoglou, J....
ACS Applied Nano Materials. 1 (2018) 12 - p. 6656-6665 , 2018

Link: https://doi.org/10.1021/..