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Sugitani, Suehiro
17  results:
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1

New Stacked Metal–Insulator–Metal Capacitor with High Capac..:

Tsutsumi, Takuya ; Sugitani, Suehiro ; Nishimura, Kazumi.
Japanese Journal of Applied Physics.  50 (2011)  4S - p. 04DF09 , 2011
Link: https://doi.org/10.7567/..
 
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2

New Stacked Metal–Insulator–Metal Capacitor with High Capac..:

Tsutsumi, Takuya ; Sugitani, Suehiro ; Nishimura, Kazumi.
Japanese Journal of Applied Physics.  50 (2011)  4S - p. 04DF09 , 2011
Link: https://doi.org/10.1143/..
 
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3

Analysis of Passivation-Film-Induced Stress Effects on Elec..:

SHIGEKAWA, Naoteru ; SUGITANI, Suehiro
IEICE Transactions on Electronics.  E93-C (2010)  8 - p. 1212-1217 , 2010
Link: https://doi.org/10.1587/..
 
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4

Numerical analysis of impact of stress in passivation films..:

Shigekawa, Naoteru ; Sugitani, Suehiro
IEICE Electronics Express.  6 (2009)  14 - p. 1045-1050 , 2009
Link: https://doi.org/10.1587/..
 
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5

Low-voltage and Broadband V-band InP HEMT Frequency Doubler..:

, In: IEEE MTT-S International Microwave Symposium Digest, 2005.,
Nishikawa, Kenjiro ; Enoki, Takatomo ; Sugitani, Suehiro.. - p. 45-48 , 2005
Link: https://doi.org/10.1109/..
 
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6

Systematic study of thermal stability of AlGaN/GaN two-dime..:

Shiojima, Kenji ; Sugitani, Suehiro ; Shigekawa, Naoteru
IEICE Electronics Express.  1 (2004)  7 - p. 160-164 , 2004
Link: https://doi.org/10.1587/..
 
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7

ICTS measurements for p-GaN Schottky contacts:

Shiojima, Kenji ; Sugitani, Suehiro ; Sakai, Shiro
Applied Surface Science.  190 (2002)  1-4 - p. 318-321 , 2002
Link: https://doi.org/10.1016/..
 
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8

Three-dimensional interconnect technology for ultra-compact..:

Hirano, Makoto ; Nishikawa, Kenjiro ; Toyoda, Ichihiko...
Solid-State Electronics.  41 (1997)  10 - p. 1451-1455 , 1997
Link: https://doi.org/10.1016/..
 
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9

Effect of an InGaP cap layer on annealing-induced conductiv..:

Watanabe, Kazuo ; Hyuga, Fumiaki ; Sugitani, Suehiro.
Journal of Applied Physics.  78 (1995)  3 - p. 1793-1797 , 1995
Link: https://doi.org/10.1063/..
 
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10

Photoluminescence characterization of InGaP/GaAs heterostru..:

Nittono, Takumi ; Sugitani, Suehiro ; Hyuga, Fumiaki
Journal of Applied Physics.  78 (1995)  9 - p. 5387-5390 , 1995
Link: https://doi.org/10.1063/..
 
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11

Si-implanted InGaP/GaAs metal-semiconductor field-effect tr..:

Hyuga, Fumiaki ; Aoki, Tatsuo ; Sugitani, Suehiro..
Applied Physics Letters.  60 (1992)  16 - p. 1963-1965 , 1992
Link: https://doi.org/10.1063/..
 
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12

Enhancement of SiO2/GaAs interface properties by electron c..:

Sugitani, Suehiro ; Asai, Kazuyoshi
Applied Physics Letters.  59 (1991)  1 - p. 84-86 , 1991
Link: https://doi.org/10.1063/..
 
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13

Phosphorus coimplantation effects on optimum annealing temp..:

Sugitani, Suehiro ; Hyuga, Fumiaki ; Yamasaki, Kimiyoshi
Journal of Applied Physics.  67 (1990)  1 - p. 552-554 , 1990
Link: https://doi.org/10.1063/..
 
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14

Characterization of a thin Si-implanted and rapid thermal a..:

Sugitani, Suehiro ; Yamasaki, Kimiyoshi ; Yamazaki, Hajime
Applied Physics Letters.  51 (1987)  11 - p. 806-808 , 1987
Link: https://doi.org/10.1063/..
 
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15

Method of Analysis of a Single-Peak DLTS spectrum with Two ..:

Nakashima, Hiroshi ; Miyagawa, Tsuyoshi ; Sugitani, Suehiro.
Japanese Journal of Applied Physics.  25 (1986)  2R - p. 205 , 1986
Link: https://doi.org/10.1143/..
 
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