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Sugiyama, Naohiro
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1

Formation of Double Shockley Stacking Faults in Heavily Nit..:

Sugiyama, Naohiro ; Mitani, Takeshi ; Kamata, Isaho...
Materials Science Forum.  1004 (2020)  - p. 427-432 , 2020
Link: https://doi.org/10.4028/..
 
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2

X-Ray Topography Analysis of 4H-SiC Crystals Grown by the H..:

Kamata, Isaho ; Hoshino, Norihiro ; Tokuda, Yuichiro...
Materials Science Forum.  924 (2018)  - p. 180-183 , 2018
Link: https://doi.org/10.4028/..
 
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3

Immobilization Phenomenon of Partials Surrounding Double Sh..:

Sugiyama, Naohiro ; Suo, Hiromasa ; Eto, Kazuma...
Materials Science Forum.  924 (2018)  - p. 160-163 , 2018
Link: https://doi.org/10.4028/..
 
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4

Fast growth of n-type 4H-SiC bulk crystal by gas-source met..:

Hoshino, Norihiro ; Kamata, Isaho ; Tokuda, Yuichiro...
Journal of Crystal Growth.  478 (2017)  - p. 9-16 , 2017
Link: https://doi.org/10.1016/..
 
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5

Synthesis of multivalent sialyllactosamine-carrying glyco-n..:

Ogata, Makoto ; Umemura, Seiichiro ; Sugiyama, Naohiro...
Carbohydrate Polymers.  153 (2016)  - p. 96-104 , 2016
Link: https://doi.org/10.1016/..
 
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6

Limitations in Very Fast Growth of 4H-SiC Crystals by High-..:

Hoshino, Norihiro ; Kamata, Isaho ; Tokuda, Yuichiro...
Materials Science Forum.  858 (2016)  - p. 29-32 , 2016
Link: https://doi.org/10.4028/..
 
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7

Developing Technologies of SiC Gas Source Growth Method:

Kojima, Jun ; Tokuda, Yuichiro ; Makino, Emi...
Materials Science Forum.  858 (2016)  - p. 23-28 , 2016
Link: https://doi.org/10.4028/..
 
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8

Doping Fluctuation and Defect Formation in Fast 4H-SiC Crys..:

Kamata, Isaho ; Hoshino, Norihiro ; Tokuda, Yuichiro...
Materials Science Forum.  858 (2016)  - p. 61-64 , 2016
Link: https://doi.org/10.4028/..
 
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9

Stable and high-speed SiC bulk growth without dendrites by ..:

Tokuda, Yuichiro ; Makino, Emi ; Sugiyama, Naohiro...
Journal of Crystal Growth.  448 (2016)  - p. 29-35 , 2016
Link: https://doi.org/10.1016/..
 
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10

High-Speed and Long-Length SiC Growth Using High-Temperatur..:

Kojima, Jun ; Makino, Emi ; Tokuda, Yuichiro...
Materials Science Forum.  821-823 (2015)  - p. 104-107 , 2015
Link: https://doi.org/10.4028/..
 
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11

Characterization of Vacant Broken Line Defects in A-Face Gr..:

Sugiyama, Naohiro ; Yamada, Masanori ; Urakami, Yasushi...
Materials Science Forum.  778-780 (2014)  - p. 386-389 , 2014
Link: https://doi.org/10.4028/..
 
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12

Development of RAF Quality 150mm 4H-SiC Wafer:

Kondo, Hiroyuki ; Takaba, Hidetaka ; Yamada, Masanori...
Materials Science Forum.  778-780 (2014)  - p. 17-21 , 2014
Link: https://doi.org/10.4028/..
 
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13

High-speed, high-quality crystal growth of 4H-SiC by high-t..:

Hoshino, Norihiro ; Kamata, Isaho ; Tokuda, Yuichiro...
Applied Physics Express.  7 (2014)  6 - p. 065502 , 2014
Link: https://doi.org/10.7567/..
 
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14

Fabrication of a SiC Double Gate Vertical Channel JFET and ..:

Schöner, Adolf ; Bakowski, Mietek ; Kumar Malhan, Rajesh...
ECS Transactions.  50 (2013)  3 - p. 45-52 , 2013
Link: https://doi.org/10.1149/..
 
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15

Design, process, and performance of all‐epitaxial normally‐..:

Malhan, Rajesh K. ; Bakowski, Mietek ; Takeuchi, Yuuichi..
physica status solidi (a).  206 (2009)  10 - p. 2308-2328 , 2009
Link: https://doi.org/10.1002/..
 
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