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Sun, D-z
99
results:
Search for persons
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Format
Online (98)
Print (1)
Mediatypes
Articles (Online) (7)
Articles (Print) (1)
Bookchapter (Online) (1)
OpenAccess-fulltext (90)
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english (94)
Sorted by: Relevance
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?
1
An anisotropic elasto-plastic material model for injection-..:
Schulenberg, L
;
Seelig, T
;
Andrieux, F
.
Journal of Composite Materials. 51 (2016) 14 - p. 2061-2078 , 2016
Link:
https://doi.org/10.1177/..
?
2
Hydrogen contaminant and its correlation with background el..:
Zhang, J-P
;
Sun, D-z
;
Wang, X-L
...
Semiconductor Science and Technology. 14 (1999) 5 - p. 403-405 , 1999
Link:
https://doi.org/10.1088/..
?
3
High-mobility Ga-polarity GaN achieved by NH3-MBE:
Wang JX
;
Wang XL
;
Sun DZ
...
GAN AND RELATED ALLOYS-2002, 743. , 2003
Link:
http://ir.semi.ac.cn/han..
?
4
Structural properties and Raman measurement of AlN films gr..:
Luo MC
;
Wang XL
;
Li JM
...
JOURNAL OF CRYSTAL GROWTH. , 2002
Link:
http://ir.semi.ac.cn/han..
?
5
Effects of annealing time and Si cap layer thickness on the..:
Gao F
;
Lin YX
;
Huang DD
...
JOURNAL OF CRYSTAL GROWTH, 227. , 2001
Link:
http://ir.semi.ac.cn/han..
?
6
Hydrogen behavior in GaN epilayers grown by NH3-MBE:
Kong MY
;
Zhang JP
;
Wang XL
..
JOURNAL OF CRYSTAL GROWTH, 227. , 2001
Link:
http://ir.semi.ac.cn/han..
?
7
Growth of SiGe heterojunction bipolar transistor using Si2H..:
Gao F
;
Huang DD
;
Li JP
...
JOURNAL OF CRYSTAL GROWTH. , 2001
Link:
http://ir.semi.ac.cn/han..
?
8
Effects of annealing time and Si cap layer thickness on the..:
Gao F
;
Lin YX
;
Huang DD
...
JOURNAL OF CRYSTAL GROWTH. , 2001
Link:
http://ir.semi.ac.cn/han..
?
9
High-quality GaN grown by gas-source MBE:
Wang JX
;
Sun DZ
;
Wang XL
...
JOURNAL OF CRYSTAL GROWTH. , 2001
Link:
http://ir.semi.ac.cn/han..
?
10
High-quality GaN grown by gas-source MBE:
Wang JX
;
Sun DZ
;
Wang XL
...
JOURNAL OF CRYSTAL GROWTH, 227. , 2001
Link:
http://ir.semi.ac.cn/han..
?
11
Changing the size and shape of Ge island by chemical etchin:
Gao F
;
Huang CJ
;
Huang DD
...
JOURNAL OF CRYSTAL GROWTH. , 2001
Link:
http://ir.semi.ac.cn/han..
?
12
Hydrogen behavior in GaN epilayers grown by NH3-MBE:
Kong MY
;
Zhang JP
;
Wang XL
..
JOURNAL OF CRYSTAL GROWTH. , 2001
Link:
http://ir.semi.ac.cn/han..
?
13
Doping during low-temperature growth of materials for n-p-n..:
Liu JP
;
Huang DD
;
Li JP
...
JOURNAL OF CRYSTAL GROWTH. , 2000
Link:
http://ir.semi.ac.cn/han..
?
14
Hydrogen-dependent lattice dilation in GaN:
Zhang JP
;
Wang XL
;
Sun DZ
..
SEMICONDUCTOR SCIENCE AND TECHNOLOGY. , 2000
Link:
http://ir.semi.ac.cn/han..
?
15
Influence of phosphine flow rate on Si growth rate in gas s..:
Gao F
;
Huang DD
;
Li JP
...
JOURNAL OF CRYSTAL GROWTH. , 2000
Link:
http://ir.semi.ac.cn/han..
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