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Sun, Dian-Zhao
1674
results:
Search for persons
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Online (1674)
Mediatypes
E-Books (2)
Articles (Online) (1542)
Bookchapter (Online) (77)
OpenAccess-fulltext (53)
Languages
english (1489)
german (3)
Sorted by: Relevance
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?
1
Hydrogen behavior in GaN epilayers grown by NH3-MBE:
Kong, Mei-Ying
;
Zhang, Jian-Ping
;
Wang, Xiao-Liang
.
Journal of Crystal Growth. 227-228 (2001) - p. 371-375 , 2001
Link:
https://doi.org/10.1016/..
?
2
Energy band and acceptor binding energy of GaN and AlxGa1−x:
Xia, Jian-Bai
;
Cheah, K.W
;
Wang, Xiao-Liang
..
Materials Science and Engineering: B. 75 (2000) 2-3 - p. 204-206 , 2000
Link:
https://doi.org/10.1016/..
?
3
Hydrogen-dependent lattice dilation in GaN:
Zhang, Jian-Ping
;
Wang, Xiao-Liang
;
Sun, Dian-Zhao
.
Semiconductor Science and Technology. 15 (2000) 6 - p. 619-621 , 2000
Link:
https://doi.org/10.1088/..
?
4
Electrical properties of GaN deposited on nitridated sapphi..:
Zhang, Jian-Ping
;
Sun, Dian-Zhao
;
Li, Xiao-Bing
...
Journal of Crystal Growth. 201-202 (1999) - p. 429-432 , 1999
Link:
https://doi.org/10.1016/..
?
5
p-Type co-doping study of GaN by photoluminescence:
Zhang, Jian-Ping
;
Sun, Dian-Zhao
;
Wang, Xiao-Liang
...
Journal of Crystal Growth. 197 (1999) 1-2 - p. 368-371 , 1999
Link:
https://doi.org/10.1016/..
?
6
Fermi-edge singularity observed in a modulation-doped AlGaN..:
Zhang, Jian-Ping
;
Sun, Dian-Zhao
;
Wang, Xiao-Liang
...
Applied Physics Letters. 73 (1998) 17 - p. 2471-2472 , 1998
Link:
https://doi.org/10.1063/..
?
7
High-concentration hydrogen in unintentionally doped GaN:
Zhang, Jian-Ping
;
Wang, Xiao-Liang
;
Sun, Dian-Zhao
..
Journal of Crystal Growth. 189-190 (1998) - p. 566-569 , 1998
Link:
https://doi.org/10.1016/..
?
8
The growth of an AlGaN/GaN modulation-doped heterostructure..:
Zhang, Jian-Ping
;
Sun, Dian-Zhao
;
Li, Xiao-Bing
...
Journal of Crystal Growth. 192 (1998) 1-2 - p. 93-96 , 1998
Link:
https://doi.org/10.1016/..
?
9
The effect of buried AlxGa1−xN isolating layers on the tran..:
Zhang, Jian-Ping
;
Sun, Dian-Zhao
;
Wang, Xiao-Liang
...
Journal of Crystal Growth. 192 (1998) 3-4 - p. 471-474 , 1998
Link:
https://doi.org/10.1016/..
?
10
Interfacial behaviour of quantum well electrode|electrolyte..:
Liu, Yao
;
Xia, Xu-Rui
;
Wang, Ruo-Zhen
...
Journal of Electroanalytical Chemistry. 429 (1997) 1-2 - p. 55-60 , 1997
Link:
https://doi.org/10.1016/..
?
11
Interfacial behaviour of a quantum well electrode|electroly..:
Liu, Yao
;
Xiao, Xu-Rui
;
Wang, Ruo-Zhen
...
Journal of Electroanalytical Chemistry. 430 (1997) 1-2 - p. 91-95 , 1997
Link:
https://doi.org/10.1016/..
?
12
Photoluminescence studies on the interaction of near-surfac..:
Liu, Yao
;
Xiao, Xu-Rui
;
Li, Xue-Ping
...
Journal of Photochemistry and Photobiology A: Chemistry. 101 (1996) 2-3 - p. 113-117 , 1996
Link:
https://doi.org/10.1016/..
?
13
EER studies of the single quantum well GaAs/AlxGa1−xAs elec..:
Liu, Yao
;
Xiao, Xu-Rui
;
Wang, Ruo-Zhen
...
Chemical Physics Letters. 256 (1996) 3 - p. 312-316 , 1996
Link:
https://doi.org/10.1016/..
?
14
Damage Removal and Strain Relaxation in As+-Implanted Si0.5..:
Lyu-fan), Zou Lü-fan (Zou
;
Zhan-guo, Wang
;
Dian-zhao, Sun
...
Chinese Physics Letters. 14 (1997) 3 - p. 209-212 , 1997
Link:
https://doi.org/10.1088/..
?
15
Diffusion of Ion Implanted As in Si1-xGexEpilayers:
Lyu-fan), Zou Lü-fan (Zou
;
Zhan-guo, Wang
;
Dian-zhao, Sun
...
Chinese Physics Letters. 14 (1997) 1 - p. 51-54 , 1997
Link:
https://doi.org/10.1088/..
1-15