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Sung, Woongje
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1

Monolithically Integrated >3kV, 20A 4H-SiC BiDFET Utilizing..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Mancini, Stephen A. ; Jang, Seung Yup ; Binder, Andrew... - p. 339-342 , 2024
Link: https://doi.org/10.1109/..
 
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2

GaN Super-Heterojunction FETs With 10-kV Blocking and 3-kV ..:

Kemmerling, Jesse T. ; Guan, Rian ; Sadek, Mansura...
IEEE Transactions on Electron Devices.  71 (2024)  2 - p. 1153-1159 , 2024
Link: https://doi.org/10.1109/..
 
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3

Mitigating High Electric Field Stresses in Power Modules Ut..:

, In: 2024 IEEE Electrical Insulation Conference (EIC),
Faruqe, Omar ; Saha, Pradip Chandra ; Muhammad Juberi, Asif... - p. 233-237 , 2024
Link: https://doi.org/10.1109/..
 
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4

Package Design and Analysis of a 20-kV Double-Sided Silicon..:

Zhang, Zichen ; Arriola, Emmanuel ; Nicholas, Carl...
IEEE Transactions on Components, Packaging and Manufacturing Technology.  14 (2024)  5 - p. 776-783 , 2024
Link: https://doi.org/10.1109/..
 
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5

A Novel 6.5 kV 4H-SiC MOSFET with a One-Channel Layout:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Lynch, Justin ; Mancini, Steve ; deBoer, Skylar... - p. 124-127 , 2024
Link: https://doi.org/10.1109/..
 
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6

A 400 V Buck Converter integrated with Gate-Drivers and low..:

Gupta, Utsav ; Zhang, Hua ; Liu, Tianshi...
Analog Integrated Circuits and Signal Processing.  119 (2024)  3 - p. 463-474 , 2024
Link: https://doi.org/10.1007/..
 
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7

Investigation of Static Performances of 1.2kV 4H-SiC MOSFET..:

Mancini, Stephen A. ; Jang, Seung Yup ; Chen, Zeyu...
IEEE Journal of the Electron Devices Society.  12 (2024)  - p. 150-158 , 2024
Link: https://doi.org/10.1109/..
 
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8

600 V 4H-SiC Lateral Bi-Directional JBS Diode Integrated MO..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jang, Seung Yup ; Mancini, Stephen A. ; Sung, Woongje - p. 335-338 , 2024
Link: https://doi.org/10.1109/..
 
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9

Design and experimental demonstration of high-voltage later..:

Isukapati, Sundar Babu ; Zhang, Hua ; Liu, Tianshi...
Materials Science in Semiconductor Processing.  169 (2024)  - p. 107921 , 2024
Link: https://doi.org/10.1016/..
 
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10

Analysis of Basal Plane Dislocation Motion Induced by p+ Io..:

Chen, Ze Yu ; Liu, Yafei ; Peng, Hong Yu...
Defect and Diffusion Forum.  426 (2023)  - p. 71-78 , 2023
Link: https://doi.org/10.4028/..
 
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11

Improved Blocking and Switching Characteristics of Split-Ga..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 350-353 , 2023
Link: https://doi.org/10.1109/..
 
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12

Packaging of 20 kV Double-Side Cooled Silicon Carbide Diode..:

, In: 2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe),
Zhang, Zichen ; Nicholas, Carl ; Emmanuel, Arriola... - p. P.1-P.6 , 2023
Link: https://doi.org/10.23919..
 
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13

Enhanced Conduction and Switching Performance of 1.2 kV 4H-..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Kim, Dongyoung ; DeBoer, Skylar ; Jang, Seung Yup.. - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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14

Packaging of 15-kV Silicon Carbide Half-Bridge Module Enabl..:

, In: 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA),
Zhang, Zichen ; Lu, Shengchang ; Nicholas, Carl... - p. 1-4 , 2023
Link: https://doi.org/10.1109/..
 
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15

First Demonstration of 600 V 4H-SiC Lateral Bi-Directional ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jang, Seung Yup ; Isukapati, Sundar Babu ; Kim, Dongyoung. - p. 5-8 , 2023
Link: https://doi.org/10.1109/..
 
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