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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
8
Development of Vertical-Channel Fin-SiC MOSFET for 3.3 kV A..:
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2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
9
Circuit Simulation Model with Design Parameters for SiC-MOS..:
, In:
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2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
13
Proposal of Vertical-channel Fin-SiC MOSFET toward Future D..:
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2021 33rd International Symposium on Power Semiconductor Devices and ICs (ISPSD) ,
15