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Szydlo, N.
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1

15.4: Invited Paper: Design of integrated Drivers with Amor..:

Lebrun, H. ; Kretz, T. ; Magarino, J..
SID Symposium Digest of Technical Papers.  36 (2005)  1 - p. 950 , 2005
Link: https://doi.org/10.1889/..
 
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2

1/f noise modeling in long channel amorphous silicon thin f..:

Rhayem, J. ; Rigaud, D. ; Valenza, M...
Journal of Applied Physics.  87 (2000)  4 - p. 1983-1989 , 2000
Link: https://doi.org/10.1063/..
 
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3

1/f Noise in amorphous silicon thin film transistors: effec..:

Rhayem, J ; Rigaud, D ; Valenza, M..
Solid-State Electronics.  43 (1999)  4 - p. 713-721 , 1999
Link: https://doi.org/10.1016/..
 
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4

1/f noise investigations in small channel length amorphous ..:

Rhayem, J. ; Valenza, M. ; Rigaud, D...
Journal of Applied Physics.  83 (1998)  7 - p. 3660-3667 , 1998
Link: https://doi.org/10.1063/..
 
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5

a‐Si self‐scanned 2.2‐in. EDTV projection LC light valve:

Lebrun, H. ; Szydlo, N. ; Maurice, F....
Journal of the Society for Information Display.  5 (1997)  1 - p. 23-25 , 1997
Link: https://doi.org/10.1889/..
 
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6

Conduction and 1/f noise analysis in amorphous silicon thin..:

Valenza, M. ; Barros, C. ; Dumas, M....
Journal of Applied Physics.  79 (1996)  2 - p. 923-928 , 1996
Link: https://doi.org/10.1063/..
 
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7

New amorphous silicon nonlinear element for liquid crystal ..:

Szydlo, N. ; Chartier, E. ; Proust, N..
Applied Physics Letters.  44 (1984)  2 - p. 205-206 , 1984
Link: https://doi.org/10.1063/..
 
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8

High current post-hydrogenated chemical vapor deposited amo..:

Szydlo, N. ; Chartier, E. ; Proust, N...
Applied Physics Letters.  40 (1982)  11 - p. 988-990 , 1982
Link: https://doi.org/10.1063/..
 
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9

Post-hydrogenated chemical vapor deposited amorphous silico..:

Szydlo, N. ; Magariño, J. ; Kaplan, D.
Journal of Applied Physics.  53 (1982)  7 - p. 5044-5051 , 1982
Link: https://doi.org/10.1063/..
 
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10

I-V and C-V characteristics of Au/TiO2 Schottky diodes:

Szydlo, N. ; Poirier, R.
Journal of Applied Physics.  51 (1980)  6 - p. 3310-3312 , 1980
Link: https://doi.org/10.1063/..
 
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11

Behavior of Au/InP Schottky diodes under heat treatment:

Szydlo, N. ; Olivier, J.
Journal of Applied Physics.  50 (1979)  3 - p. 1445-1449 , 1979
Link: https://doi.org/10.1063/..
 
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12

Alkaline-metals-silicon Schottky barriers:

Szydlo, N. ; Poirier, R.
Journal of Applied Physics.  44 (1973)  3 - p. 1386-1387 , 1973
Link: https://doi.org/10.1063/..
 
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13

Internal Photoemission Measurements in a Metal-Al2O3–Si Sys..:

Szydlo, N. ; Poirier, R.
Journal of Applied Physics.  42 (1971)  12 - p. 4880-4882 , 1971
Link: https://doi.org/10.1063/..
 
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14

REVERSE I-V CHARACTERISTICS OF THE Na–Si SCHOTTKY BARRIER:

Szydlo, N. ; Poirier, R. ; Kleefstra, M.
Applied Physics Letters.  17 (1970)  11 - p. 477-478 , 1970
Link: https://doi.org/10.1063/..
 
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15

PHOTOÉMISSION DANS LES DIÉLECTRIQUES : MESURE DU LIBRE PARC..:

Szydlo, N ; Poirier, R
info:eu-repo/semantics/altIdentifier/doi/10.1051/jphyscol:1973618.  , 1973
Link: https://hal.science/jpa-..
 
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