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Türüt, Abdulmecit
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1

Self-driven, stable broadband photodetector based on GaAs:C..:

Yıldırım, Fatma ; Bacaksız, Emin ; Türüt, Abdulmecit.
Surfaces and Interfaces.  44 (2024)  - p. 103709 , 2024
Link: https://doi.org/10.1016/..
 
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2

Self-powered stable high-performance UV–Vis–NIR broadband p..:

Havigh, Roya Shokrani ; Yıldırım, Fatma ; Mahmoudi Chenari, Hossein..
Nanotechnology.  35 (2024)  33 - p. 335201 , 2024
Link: https://doi.org/10.1088/..
 
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3

An experimental study: Dependence of Schottky diode paramet..:

Efeoǧlu, Hasan ; Turut, Abdulmecit ; Gül, Melik
Optical Materials.  142 (2023)  - p. 114038 , 2023
Link: https://doi.org/10.1016/..
 
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4

Frequency and temperature-dependent electrical characterist..:

Coskun, Mustafa ; Turut, Abdulmecit ; Ejderha, Kadir
Journal of Materials Science: Materials in Electronics.  34 (2023)  27 - p. , 2023
Link: https://doi.org/10.1007/..
 
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5

A highly stable temperature sensor based on Au/Cu/n-Si Scho..:

Efeoğlu, Hasan ; Turut, Abdulmecit
Journal of Physics D: Applied Physics.  55 (2022)  18 - p. 185303 , 2022
Link: https://doi.org/10.1088/..
 
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6

Current–Voltage Characteristics of Pt Metal-based and PtSi ..:

Efeoǧlu, Hasan ; Turut, Abdulmecit ; Gül, Melik
Journal of Electronic Materials.  52 (2022)  2 - p. 1410-1418 , 2022
Link: https://doi.org/10.1007/..
 
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7

Current-voltage-measurement temperature characteristics dep..:

Efeoǧlu, Hasan ; Turut, Abdulmecit
Materials Science in Semiconductor Processing.  143 (2022)  - p. 106532 , 2022
Link: https://doi.org/10.1016/..
 
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8

Discrepancies in barrier heights obtained from current–volt..:

Altındal, Şemsettin ; Özdemir, Ahmet Faruk ; Aydoğan, Şakir.
Journal of Materials Science: Materials in Electronics.  33 (2022)  15 - p. 12210-12223 , 2022
Link: https://doi.org/10.1007/..
 
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9

Temperature dependence of electrical parameters of the Cu/n..:

Bakkaloğlu, Ömer Faruk ; Ejderha, Kadir ; Efeoğlu, Hasan..
Journal of Molecular Structure.  1224 (2021)  - p. 129057 , 2021
Link: https://doi.org/10.1016/..
 
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10

2nd international congress on semiconductor materials and d..:

Aydoğan, Şakir ; Türüt, Abdülmecit ; Çaldıran, Zakir.
Materials Today: Proceedings.  46 (2021)  - p. 6881-6882 , 2021
Link: https://doi.org/10.1016/..
 
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11

Effect of the Al2O3 interfacial layer thickness on the meas..:

Turut, Abdulmecit ; Karabulut, Abdulkerim ; Efeoǧlu, Hasan
Journal of Materials Science: Materials in Electronics.  32 (2021)  17 - p. 22680-22688 , 2021
Link: https://doi.org/10.1007/..
 
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12

Dependence of Electrical Properties of Ni/n-GaP/Al Schottky..:

Ejderha, Kadir ; Turut, Abdulmecit
Journal of Electronic Materials.  50 (2021)  12 - p. 6741-6747 , 2021
Link: https://doi.org/10.1007/..
 
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13

Analysis and Comparison of the Main Electrical Characterist..:

Bakkaloğlu, Ömer Faruk ; Ejderha, Kadir ; Efeoğlu, Hasan..
Silicon.  14 (2021)  7 - p. 3493-3500 , 2021
Link: https://doi.org/10.1007/..
 
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14

A useful model to interpret the experimental I-V-T and C-V-..:

Asubay, Sezai ; Turut, Abdulmecit
Australian Journal of Electrical and Electronics Engineering.  17 (2020)  4 - p. 278-285 , 2020
Link: https://doi.org/10.1080/..
 
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15

International Congress on Semiconductor Materials and Devic..:

Faruk Yüksel, Ö. ; Türüt, Abdülmecit ; Öznur Karabulut, Elife
Materials Today: Proceedings.  18 (2019)  - p. 1793-1795 , 2019
Link: https://doi.org/10.1016/..
 
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