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Tadjer, Marko J.
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1

Silicon Ion Implant Activation in β-(Al0.2Ga0.8)2O3:

Jacobs, Alan G. ; Spencer, Joseph A. ; Tadjer, Marko J....
Journal of Electronic Materials.  53 (2024)  6 - p. 2811-2816 , 2024
Link: https://doi.org/10.1007/..
 
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2

Experimental Validation of Robust Hybrid Edge Termination S..:

Lundh, James Spencer ; Jacobs, Alan G. ; Pandey, Prakash...
IEEE Electron Device Letters.  45 (2024)  5 - p. 873-876 , 2024
Link: https://doi.org/10.1109/..
 
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3

Lifetime and Molecular Coupling in Surface Phonon Polariton..:

Esfidani, S. Maryam Vaghefi ; Tadjer, Marko J. ; Folland, Thomas G.
ACS Omega.  9 (2024)  19 - p. 21136-21143 , 2024
Link: https://doi.org/10.1021/..
 
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4

Assessment of channel temperature in β-(AlxGa1−x)2O3/Ga2O3 ..:

Lundh, James Spencer ; Pavlidis, Georges ; Sasaki, Kohei...
Applied Physics Letters.  124 (2024)  5 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Reduced temperature in lateral (AlxGa1−x)2O3/Ga2O3 heteroju..:

Masten, Hannah N. ; Lundh, James Spencer ; Feygelson, Tatyana I....
Applied Physics Letters.  124 (2024)  15 - p. , 2024
Link: https://doi.org/10.1063/..
 
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6

Suppression of Enhanced Magnesium Diffusion During High‐Pre..:

Jacobs, Alan G. ; Feigelson, Boris N. ; Lundh, James S....
physica status solidi (a).  , 2024
Link: https://doi.org/10.1002/..
 
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7

Operation up to 225°C of NiO/ β-(Al0.21Ga0.79)2O3 /Ga2O3 He..:

Wan, Hsiao-Hsuan ; Li, Jian-Sian ; Chiang, Chao-Ching...
ECS Transactions.  113 (2024)  7 - p. 3-14 , 2024
Link: https://doi.org/10.1149/..
 
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8

Nanocrystalline Diamond Lateral Overgrowth for High Thermal..:

Francis, Daniel ; Ji, Xiaoyang ; Vanjari, Sai Charan...
ECS Transactions.  113 (2024)  7 - p. 15-22 , 2024
Link: https://doi.org/10.1149/..
 
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9

1 kV Self-Aligned Vertical GaN Superjunction Diode:

Ma, Yunwei ; Porter, Matthew ; Qin, Yuan...
IEEE Electron Device Letters.  45 (2024)  1 - p. 12-15 , 2024
Link: https://doi.org/10.1109/..
 
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10

PtOx Schottky Contacts on Degenerately Doped $$\left( {\ove..:

Spencer, Joseph A. ; Jacobs, Alan G. ; Hobart, Karl D....
Journal of Electronic Materials.  53 (2024)  6 - p. 2798-2805 , 2024
Link: https://doi.org/10.1007/..
 
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11

2.5 kV Vertical Ga2O3 Schottky Rectifier With Graded Juncti..:

Wang, Boyan ; Xiao, Ming ; Spencer, Joseph...
IEEE Electron Device Letters.  44 (2023)  2 - p. 221-224 , 2023
Link: https://doi.org/10.1109/..
 
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12

10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational a..:

Qin, Yuan ; Xiao, Ming ; Porter, Matthew...
IEEE Electron Device Letters.  44 (2023)  8 - p. 1268-1271 , 2023
Link: https://doi.org/10.1109/..
 
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13

Wide‐Bandgap Nickel Oxide with Tunable Acceptor Concentrati..:

Ma, Yunwei ; Qin, Yuan ; Porter, Matthew...
Advanced Electronic Materials.  , 2023
Link: https://doi.org/10.1002/..
 
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14

NiO Junction Termination Extension for Ga2O3 Devices: High ..:

, In: 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Xiao, Ming ; Wang, Boyan ; Zhang, Ruizhe... - p. 386-389 , 2023
Link: https://doi.org/10.1109/..
 
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15

Towards Controlled Transfer of (001) β-Ga2O3 to (0001) 4H-S..:

Liao, Michael Evan ; Huynh, Kenny ; Carson, Brandon...
ECS Transactions.  112 (2023)  3 - p. 269-278 , 2023
Link: https://doi.org/10.1149/..
 
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