E-LIB Suche - Ergebnisse für: Taizoh Sadoh, Taizoh Sadoh

1

High-Performance MOS Tunneling Cathode with CoSi2 Gate Elec..:

Taizoh Sadoh, Taizoh Sadoh ; Yi-Qun Zhang, Yi-Qun Zhang ; Hiroki Yasunaga, Hiroki Yasunaga...
Japanese Journal of Applied Physics. 40 (2001) 4S - p. 2775 , 2001

Link: https://doi.org/10.1143/..

2

Thin CoSi2 Formation on SiO2 with Low-Energy Ion Irradiatio:

Atsushi Matsushita, Atsushi Matsushita ; Taizoh Sadoh, Taizoh Sadoh ; Toshio Tsurushima, Toshio Tsurushima
Japanese Journal of Applied Physics. 37 (1998) 11R - p. 6117 , 1998

Link: https://doi.org/10.1143/..

3

Modulation of Schottky barrier at metal/Ge contacts by phos..:

Katayama, Keita ; Ikenoue, Hiroshi ; Sadoh, Taizoh
Materials Science in Semiconductor Processing. 160 (2023) - p. 107433 , 2023

Link: https://doi.org/10.1016/..

4

Preface: Special issue on control of semiconductor interfac..:

Shiojima, Kenji ; Nakatsuka, Osamu ; Kita, Koji..
Materials Science in Semiconductor Processing. 158 (2023) - p. 107386 , 2023

Link: https://doi.org/10.1016/..

5

Improved carrier mobility of Sn-doped Ge thin films (≤20 nm..:

Nagano, Takaya ; Hara, Ryutaro ; Moto, Kenta..
Materials Science in Semiconductor Processing. 165 (2023) - p. 107692 , 2023

Link: https://doi.org/10.1016/..

6

High mobility of (111)-oriented large-domain (>100 μm) p..:

Kajiwara, Takashi ; Shimoda, Otokichi ; Okada, Tatsuya...
Journal of Applied Physics. 132 (2022) 14 - p. , 2022

Link: https://doi.org/10.1063/..

7

Solid-Phase Crystallization Characteristics of Interface-Mo..:

, In: 2022 29th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),

Nagano, Takaya ; Hara, Ryutaro ; Sadoh, Taizoh - p. 114-115 , 2022

Link: https://doi.org/10.23919..

8

Improved Carrier Mobility of Poly-Ge Ultrathin Films on Ins..:

, In: 2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),

Hara, Ryutaro ; Chiyozono, Masanori ; Sadoh, Taizoh - p. 106-107 , 2021

Link: https://doi.org/10.23919..

9

SiSn Film on Insulator by Low-Temperature Solid-Phase Cryst..:

, In: 2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),

Kosugi, Tomohiro ; Yagi, Kazuki ; Sadoh, Taizoh - p. 99-100 , 2020

Link: https://doi.org/10.23919..

10

Improved Carrier Mobility of Sn-Doped Ge Thin-Films (≤50 nm..:

, In: 2020 27th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD),

Chiyozono, Masanori ; Gong, Xiangsheng ; Sadoh, Taizoh - p. 75-76 , 2020

Link: https://doi.org/10.23919..

11

Layer-exchange crystallization for low-temperature (∼450 °C..:

Gao, Hongmiao ; Sadoh, Taizoh
Applied Physics Letters. 117 (2020) 17 - p. , 2020

Link: https://doi.org/10.1063/..

12

Fabrication of CMOS Invertors in Si Thin-Film-Transistors b..:

Imokawa, Kaname ; Kurashige, Takayuki ; Suwa, Akira...
IEEE Journal of the Electron Devices Society. 8 (2020) - p. 27-32 , 2020

Link: https://doi.org/10.1109/..

13

Low-Temperature (∼250°C) Gold-Induced Lateral Growth of Sn-..:

Sadoh, Taizoh ; Sakai, Takatsugu ; Matsumura, Ryo
ECS Journal of Solid State Science and Technology. 8 (2019) 10 - p. P609-P614 , 2019

Link: https://doi.org/10.1149/..

14

Enhanced mobility of Sn-doped Ge thin-films (≤50 nm) on ins..:

Xu, Chang ; Gong, Xiangsheng ; Miyao, Masanobu.
Applied Physics Letters. 115 (2019) 4 - p. , 2019

Link: https://doi.org/10.1063/..

15

Nucleation-controlled low-temperature solid-phase crystalli..:

Xu, Chang ; Gao, Hongmiao ; Sugino, Takayuki..
Applied Physics Letters. 112 (2018) 24 - p. , 2018

Link: https://doi.org/10.1063/..