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Tang, Chuying
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1

High VTH and Breakdown Enhancement-Mode GaN HEMTs for Power..:

, In: 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD),
Jiang, Yang ; Du, Fangzhou ; Wen, Kangyao... - p. 378-381 , 2024
Link: https://doi.org/10.1109/..
 
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2

Charge trapping layer enabled high-performance E-mode GaN H..:

Jiang, Yang ; Du, FangZhou ; Wen, KangYao...
Applied Physics Letters.  124 (2024)  24 - p. , 2024
Link: https://doi.org/10.1063/..
 
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3

A robust Ni/Au process and mechanism for p-type ohmic conta..:

Tang, Chuying ; Fu, Chun ; Du, Fangzhou...
Journal of Alloys and Compounds.  978 (2024)  - p. 173499 , 2024
Link: https://doi.org/10.1016/..
 
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4

Threshold voltage modulation on a CTL-based monolithically ..:

Jiang, Yang ; Du, FangZhou ; Wen, KangYao...
Applied Physics Letters.  125 (2024)  3 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

Lithium Niobate MEMS Antisymmetric Lamb Wave Resonators wit..:

Zhang, Yi ; Jiang, Yang ; Tang, Chuying...
Micromachines.  15 (2024)  2 - p. 195 , 2024
Link: https://doi.org/10.3390/..
 
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6

Investigation of Nitrogen-Based Plasma Passivation on GaN R..:

Hu, Qiaoyu ; Cheng, Wei-Chih ; Chen, Xiguang...
IEEE Journal of the Electron Devices Society.  , 2024
Link: https://doi.org/10.1109/..
 
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7

Current collapse suppression in AlGaN/GaN HEMTs using dual-..:

Deng, Chenkai ; Cheng, Wei-Chih ; Chen, XiGuang...
Applied Physics Letters.  122 (2023)  23 - p. , 2023
Link: https://doi.org/10.1063/..
 
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8

Quasi-normally off AlGaN/GaN high-electron-mobility transis..:

Lu, Honghao ; Wen, Kangyao ; Du, Fangzhou...
Materials Science in Semiconductor Processing.  154 (2023)  - p. 107221 , 2023
Link: https://doi.org/10.1016/..
 
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9

Interface charge engineering on an in situ SiNx/AlGaN/GaN p..:

He, JiaQi ; Wen, KangYao ; Wang, PeiRan...
Applied Physics Letters.  123 (2023)  10 - p. , 2023
Link: https://doi.org/10.1063/..
 
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10

Simulation of High Breakdown Voltage, Improved Current Coll..:

Wang, Peiran ; Deng, Chenkai ; Cheng, Hongyu...
Crystals.  13 (2023)  1 - p. 110 , 2023
Link: https://doi.org/10.3390/..
 
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11

The Atomic Layer Etching Technique with Surface Treatment F..:

Du, Fangzhou ; Jiang, Yang ; Wu, Zhanxia...
Crystals.  12 (2022)  5 - p. 722 , 2022
Link: https://doi.org/10.3390/..
 
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12

Ohmic Contact With a Contact Resistivity of 12 Ω ⋅ mm on p-..:

Tang, Chu-Ying ; Lu, Hong-Hao ; Qiao, Ze-Peng...
IEEE Electron Device Letters.  43 (2022)  9 - p. 1412-1415 , 2022
Link: https://doi.org/10.1109/..
 
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13

Microscopic formation mechanism of Si/Tl5Al1/TiN ohmic cont..:

Jiang, Yang ; Du, FangZhou ; He, JiaQi...
Applied Physics Letters.  121 (2022)  21 - p. , 2022
Link: https://doi.org/10.1063/..
 
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14

Normally-OFF AlGaN/GaN MIS-HEMTs With Low RON and Vth Hyste..:

He, Jiaqi ; Wang, Qing ; Zhou, Guangnan...
IEEE Electron Device Letters.  43 (2022)  4 - p. 529-532 , 2022
Link: https://doi.org/10.1109/..
 
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15

Atomic layer etching technique for InAlN/GaN heterostructur..:

Du, Fangzhou ; Jiang, Yang ; Qiao, Zepeng...
Materials Science in Semiconductor Processing.  143 (2022)  - p. 106544 , 2022
Link: https://doi.org/10.1016/..
 
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