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Tao, Hongchang
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1

Conductivity-Modulated GaN-Based Ultraviolet Light-Emitting..:

Tao, Hongchang ; Xu, Shengrui ; Bai, Junchun...
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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2

Enhanced hole transport of nonpolar InGaN-based light-emitt..:

Tao, Hongchang ; Xu, Shengrui ; Zhang, Yachao...
Fundamental Research.  , 2024
Link: https://doi.org/10.1016/..
 
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3

The solution of wetting issues in GaN epitaxy on (111) SCD ..:

Gao, Yuan ; Wang, Xinhao ; Xu, Shengrui...
Journal of Alloys and Compounds.  970 (2024)  - p. 172560 , 2024
Link: https://doi.org/10.1016/..
 
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4

An energy-band modulated p-GaN/InGaN/AlN p-channel MESFET w..:

Su, Huake ; Zhang, Tao ; Xu, Shengrui...
Applied Physics Letters.  124 (2024)  16 - p. , 2024
Link: https://doi.org/10.1063/..
 
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5

The enhanced GaN deposition on highly N-incorporated diamon..:

Gao, Yuan ; Xu, Shengrui ; Tao, Hongchang...
Materials Letters.  371 (2024)  - p. 136865 , 2024
Link: https://doi.org/10.1016/..
 
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6

Normally-Off p-Channel AlGaN/GaN/AlGaN MESFET With High Bre..:

Su, Huake ; Zhang, Tao ; Xu, Shengrui...
IEEE Electron Device Letters.  44 (2023)  12 - p. 1939-1942 , 2023
Link: https://doi.org/10.1109/..
 
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7

Improved Efficiency Droop of 370 nm UV LEDs with ITO/Au/ITO..:

Fan, Xiaomeng ; Xu, Shengrui ; Huang, Yuzhi...
ECS Journal of Solid State Science and Technology.  12 (2023)  9 - p. 096001 , 2023
Link: https://doi.org/10.1149/..
 
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8

Enhanced performance of GaN-based ultraviolet light emittin..:

Fan, Xiaomeng ; Xu, Shengrui ; Liu, Weiguo...
Results in Physics.  51 (2023)  - p. 106714 , 2023
Link: https://doi.org/10.1016/..
 
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9

High quality GaN films on miscut (1 1 1) diamond substrates..:

Gao, Yuan ; Xu, Shengrui ; Tao, Hongchang...
Results in Physics.  47 (2023)  - p. 106368 , 2023
Link: https://doi.org/10.1016/..
 
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10

Improved Crystal Quality and Enhanced Optical Performance o..:

Tao, Hongchang ; Xu, Shengrui ; Zhang, Jincheng...
Optics Express.  , 2023
Link: https://doi.org/10.1364/..
 
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11

Improved crystal quality of AlGaN by Al ion-implantation sa..:

Tao, Hongchang ; Xu, Shengrui ; Su, Huake...
Materials Letters.  351 (2023)  - p. 135097 , 2023
Link: https://doi.org/10.1016/..
 
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12

Interface state analysis of Schottky-gated p-AlGaN/u-GaN/Al..:

Su, Huake ; Zhang, Tao ; Xu, Shengrui...
Applied Physics Letters.  123 (2023)  13 - p. , 2023
Link: https://doi.org/10.1063/..
 
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13

High Efficiency Deep Ultraviolet Light-Emitting Diodes With..:

Liu, Xu ; Xu, Shengrui ; Tao, Hongchang...
IEEE Photonics Journal.  15 (2023)  2 - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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14

Enhanced Performance of N-Polar AlGaN-Based Ultraviolet Lig..:

Tao, Hongchang ; Xu, Shengrui ; Cao, Yanrong...
IEEE Photonics Journal.  15 (2023)  3 - p. 1-5 , 2023
Link: https://doi.org/10.1109/..
 
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15

Application of nano-patterned InGaN fabricated by self-asse..:

Peng, Ruoshi ; Xu, Shengrui ; Fan, Xiaomeng...
Journal of Semiconductors.  44 (2023)  4 - p. 042801 , 2023
Link: https://doi.org/10.1088/..
 
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