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Taoka, Noriyuki
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1

Formation of one-dimensionally self-aligned Si-QDs and thei..:

Imai, Yuki ; Makihara, Katsunori ; Yamamoto, Yuji...
Japanese Journal of Applied Physics.  63 (2024)  4 - p. 041003 , 2024
Link: https://doi.org/10.35848..
 
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2

Formation of ultra-thin nickel silicide on SiO2 using Si/Ni..:

Kimura, Keisuke ; Taoka, Noriyuki ; Ohta, Akio..
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP72 , 2024
Link: https://doi.org/10.35848..
 
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3

Formation of Al-incorporated SiC thin films by chemical vap..:

Tsuchiizu, Yuuki ; Ono, Koki ; Uehara, Kenichi...
Japanese Journal of Applied Physics.  63 (2024)  3 - p. 03SP44 , 2024
Link: https://doi.org/10.35848..
 
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4

Electron emission from alignment-controlled multiple stacks..:

Makihara, Katsunori ; Yamamoto, Yuji ; Yagi, Hiroya...
Materials Science in Semiconductor Processing.  174 (2024)  - p. 108227 , 2024
Link: https://doi.org/10.1016/..
 
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5

Formation of β-FeSi2 nanodots by SiH4 exposure to Fe nanodo..:

Saito, Haruto ; Makihara, Katsunori ; Taoka, Noriyuki.
Japanese Journal of Applied Physics.  63 (2024)  2 - p. 02SP99 , 2024
Link: https://doi.org/10.35848..
 
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6

Evaluation of chemical structure and Si segregation of Al/S..:

Sakai, Taiki ; Ohta, Akio ; Matsushita, Keigo...
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1059 , 2023
Link: https://doi.org/10.35848..
 
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7

Alignment control of self-assembling Si quantum dots:

Imai, Yuki ; Tsuji, Ryoya ; Makihara, Katsunori...
Materials Science in Semiconductor Processing.  162 (2023)  - p. 107526 , 2023
Link: https://doi.org/10.1016/..
 
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8

Layer transfer of ultrathin Ge crystal segregated on Al/Ge(..:

Matsushita, Keigo ; OHTA, Akio ; Shibayama, Shigehisa...
Japanese Journal of Applied Physics.  , 2023
Link: https://doi.org/10.35848..
 
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9

Room Temperature Light Emission from Superatom-like Ge–Core..:

Makihara, Katsunori ; Yamamoto, Yuji ; Imai, Yuki...
Nanomaterials.  13 (2023)  9 - p. 1475 , 2023
Link: https://doi.org/10.3390/..
 
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10

Formation of ultra-thin NiGe film with single crystalline p..:

Nishimura, Shunsuke ; Taoka, Noriyuki ; Ohta, Akio..
Japanese Journal of Applied Physics.  62 (2023)  SC - p. SC1027 , 2023
Link: https://doi.org/10.35848..
 
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11

Characterization of electronic charged states of high densi..:

Imai, Yuki ; Makihara, Katsunori ; Taoka, Noriyuki..
Japanese Journal of Applied Physics.  61 (2022)  SD - p. SD1012 , 2022
Link: https://doi.org/10.35848..
 
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12

Magnetic-Field Dependent Electron Transport of Fe3Si Nanodo..:

WU, Jialin ; MAKIHARA, Katsunori ; ZHANG, Hai...
IEICE Transactions on Electronics.  E105.C (2022)  10 - p. 616-621 , 2022
Link: https://doi.org/10.1587/..
 
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13

SiO2/GaN interfaces with low defect densities and high brea..:

Aoshima, Keito ; Taoka, Noriyuki ; Horita, Masahiro.
Japanese Journal of Applied Physics.  , 2022
Link: https://doi.org/10.35848..
 
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14

Study on silicidation reaction of Fe nanodots with SiH4:

Furuhata, Hiroshi ; Makihara, Katsunori ; Shimura, Yosuke...
Applied Physics Express.  15 (2022)  5 - p. 055503 , 2022
Link: https://doi.org/10.35848..
 
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15

Effects of Cl passivation on Al2O3/GaN interface properties:

Nagai, Taisei ; Taoka, Noriyuki ; Ohta, Akio..
Japanese Journal of Applied Physics.  62 (2022)  SA - p. SA1002 , 2022
Link: https://doi.org/10.35848..
 
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