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Taur, Yuan
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1

Modeling of Electrostatics and Currents in a Forward-Biased..:

Lin, Kuan-Wun ; Taur, Yuan
IEEE Transactions on Electron Devices.  , 2024
Link: https://doi.org/10.1109/..
 
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2

A non-GCA model for ground-plane MOSFETs:

Su, Meihua ; Hong, Chuyang ; Taur, Yuan
Solid-State Electronics.  209 (2023)  - p. 108754 , 2023
Link: https://doi.org/10.1016/..
 
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3

On the Log-Linear Inversion-Charge Relation for MOSFET Mode..:

Taur, Yuan
IEEE Transactions on Electron Devices.  69 (2022)  1 - p. 427-429 , 2022
Link: https://doi.org/10.1109/..
 
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4

Effects of BOX thickness, silicon thickness, and backgate b..:

Su, Elizabeth Mei-hua ; Hong, David Chuyang ; Cristoloveanu, Sorin.
Microelectronic Engineering.  238 (2021)  - p. 111506 , 2021
Link: https://doi.org/10.1016/..
 
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5

Non-GCA modeling of near threshold I-V characteristics of D..:

Ren, Zhongjie ; Taur, Yuan
Solid-State Electronics.  166 (2020)  - p. 107766 , 2020
Link: https://doi.org/10.1016/..
 
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6

Understanding the Mechanism of Electronic Defect Suppressio..:

Kavrik, Mahmut Sami ; Bostwick, Aaron ; Rotenberg, Eli...
Journal of the American Chemical Society.  142 (2019)  1 - p. 134-145 , 2019
Link: https://doi.org/10.1021/..
 
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7

Engineering High-k/SiGe Interface with ALD Oxide for Select..:

Kavrik, Mahmut S. ; Ercius, Peter ; Cheung, Joanna...
ACS Applied Materials & Interfaces.  11 (2019)  16 - p. 15111-15121 , 2019
Link: https://doi.org/10.1021/..
 
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8

Insight into carrier lifetime impact on band-modulation dev..:

Parihar, Mukta Singh ; Lee, Kyung Hwa ; Park, Hyung Jin...
Solid-State Electronics.  143 (2018)  - p. 41-48 , 2018
Link: https://doi.org/10.1016/..
 
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9

Ultralow Defect Density at Sub-0.5 nm HfO2/SiGe Interfaces ..:

Kavrik, Mahmut S. ; Thomson, Emily ; Chagarov, Evgueni...
ACS Applied Materials & Interfaces.  10 (2018)  36 - p. 30794-30802 , 2018
Link: https://doi.org/10.1021/..
 
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10

A comprehensive model on field-effect pnpn devices (Z 2 -FE..:

Taur, Yuan ; Lacord, Joris ; Parihar, Mukta Singh...
Solid-State Electronics.  134 (2017)  - p. 1-8 , 2017
Link: https://doi.org/10.1016/..
 
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11

Characterization of interface defects in ALD Al 2 O 3 /p-Ga..:

Gu, Siyuan ; Min, Jie ; Taur, Yuan.
Solid-State Electronics.  118 (2016)  - p. 18-25 , 2016
Link: https://doi.org/10.1016/..
 
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12

Invited talk: CMOS device scaling — Past, present, and futu..:

, In: 2014 IEEE Workshop On Microelectronics And Electron Devices (WMED),
Taur, Yuan - p. 1-1 , 2014
Link: https://doi.org/10.1109/..
 
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13

Diameter-Independent Hole Mobility in Ge/Si Core/Shell Nano..:

Nguyen, Binh-Minh ; Taur, Yuan ; Picraux, S. Tom.
Nano Letters.  14 (2014)  2 - p. 585-591 , 2014
Link: https://doi.org/10.1021/..
 
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14

Determination of energy and spatial distribution of oxide b..:

Dou, Chunmeng ; Lin, Dennis ; Vais, Abhitosh...
Microelectronics Reliability.  54 (2014)  4 - p. 746-754 , 2014
Link: https://doi.org/10.1016/..
 
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15

Re-examination of the extraction of MOS interface-state den..:

Chen, Han-Ping ; Yuan, Yu ; Yu, Bo...
Semiconductor Science and Technology.  28 (2013)  8 - p. 085008 , 2013
Link: https://doi.org/10.1088/..
 
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Related subjects
Großintegration. LSI