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Teklinska, Dominika
11
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Online (11)
Mediatypes
Articles (Online) (10)
OpenAccess-fulltext (1)
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1
Corrigendum to "Advantages of using few-mode and multimode ..:
Ramaniuk, Aleksandr
;
Kaczorowski, Jakub
;
Nowakowski, Piotr
...
Optical Fiber Technology. 82 (2024) - p. 103503 , 2024
Link:
https://doi.org/10.1016/..
?
2
Advantages of using few-mode and multimode fibers in Phase ..:
Ramaniuk, Aleksandr
;
Kaczorowski, Jakub
;
Nowakowski, Piotr
...
Optical Fiber Technology. 74 (2022) - p. 103086 , 2022
Link:
https://doi.org/10.1016/..
?
3
Mechanical properties and tribological performance of alumi..:
Cygan, Tomasz
;
Petrus, Mateusz
;
Wozniak, Jaroslaw
...
Ceramics International. 46 (2020) 6 - p. 7170-7177 , 2020
Link:
https://doi.org/10.1016/..
?
4
Ni(111) Thin Layers Recrystallization Studied by SEM, EBSD ..:
Teklinska, Dominika
;
Jozwik, Iwona
;
Knyps, Piotr
Microscopy and Microanalysis. 25 (2019) S2 - p. 1982-1983 , 2019
Link:
https://doi.org/10.1017/..
?
5
The role of hydrogen in carbon incorporation and surface ro..:
Caban, Piotr A.
;
Teklinska, Dominika
;
Michalowski, Pawel P.
...
Journal of Crystal Growth. 498 (2018) - p. 71-76 , 2018
Link:
https://doi.org/10.1016/..
?
6
Influence of Phosphorus Implantation on Electrical Properti..:
Krol, Krystian
;
Sochacki, Mariusz
;
Turek, Marcin
...
Materials Science Forum. 821-823 (2015) - p. 496-499 , 2015
Link:
https://doi.org/10.4028/..
?
7
The influence of pressure on growth of 3C-SiC heteroepitaxi..:
Teklinska, Dominika
;
Grodecki, Kacper
;
Jozwik-Biała, Iwona
...
Journal of Crystal Growth. 401 (2014) - p. 542-546 , 2014
Link:
https://doi.org/10.1016/..
?
8
Effect of Nitrogen Doping on the Growth of 4H Polytype on t..:
Tymicki, Emil
;
Grasza, Krzysztof
;
Racka, Katarzyna
...
Materials Science Forum. 717-720 (2012) - p. 29-32 , 2012
Link:
https://doi.org/10.4028/..
?
9
Epitaxial graphene perfection vs. SiC substrate quality:
Teklinska, Dominika
;
Kosciewicz, Kinga
;
Grodecki, Kacper
...
Open Physics. 9 (2011) 2 - p. 446-453 , 2011
Link:
https://doi.org/10.2478/..
?
10
Epitaxial Growth on 4H-SiC on-Axis, 0.5°, 1.25°, 2°, 4°, 8°..:
Kościewicz, Kinga
;
Strupiński, Wlodek
;
Teklinska, Dominika
...
Materials Science Forum. 679-680 (2011) - p. 95-98 , 2011
Link:
https://doi.org/10.4028/..
?
11
Epitaxial graphene perfection vs. SiC substrate quality:
Teklinska Dominika
;
Kosciewicz Kinga
;
Grodecki Kacper
...
https://doi.org/10.2478/s11534-010-0136-3. , 2011
Link:
https://doi.org/10.2478/..
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