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Thelander, C.
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1

Strong coupling between a microwave photon and a singlet-tr..:

Ungerer, J. H. ; Pally, A. ; Kononov, A....
Nature Communications.  15 (2024)  1 - p. , 2024
Link: https://doi.org/10.1038/..
 
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2

Ambipolar transport in narrow bandgap semiconductor InSb na..:

Dalelkhan, B. ; Göransson, D. J. O. ; Thelander, C....
Nanoscale.  12 (2020)  15 - p. 8159-8165 , 2020
Link: https://doi.org/10.1039/..
 
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3

Electrical control of spins and giant g-factors in ring-lik..:

Potts, H. ; Chen, I.–J. ; Tsintzis, A....
Nature Communications.  10 (2019)  1 - p. , 2019
Link: https://doi.org/10.1038/..
 
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4

Vertical Gate-All-Around Nanowire GaSb-InAs Core-Shell n-Ty..:

Vasen, T. ; Ramvall, P. ; Afzalian, A....
Scientific Reports.  9 (2019)  1 - p. , 2019
Link: https://doi.org/10.1038/..
 
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5

Individually addressable double quantum dots formed with na..:

Barker, D. ; Lehmann, S. ; Namazi, L....
Applied Physics Letters.  114 (2019)  18 - p. , 2019
Link: https://doi.org/10.1063/..
 
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6

Core-Shell TFET Developments and TFET Limitations:

, In: 2019 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA),
Passlack, M. ; Ramvall, P. ; Vasen, T.... - p. 1-2 , 2019
Link: https://doi.org/10.1109/..
 
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7

Imaging Atomic Scale Dynamics on III–V Nanowire Surfaces Du..:

Webb, J. L. ; Knutsson, J. ; Hjort, M....
Scientific Reports.  7 (2017)  1 - p. , 2017
Link: https://doi.org/10.1038/..
 
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8

Interface composition of InAs nanowires with Al2O3 and HfO2..:

Timm, R. ; Hjort, M. ; Fian, A....
Applied Physics Letters.  99 (2011)  22 - p. 222907 , 2011
Link: https://doi.org/10.1063/..
 
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9

Interface composition of atomic layer deposited HfO2 and Al..:

Timm, R. ; Hjort, M. ; Fian, A....
Microelectronic Engineering.  88 (2011)  7 - p. 1091-1094 , 2011
Link: https://doi.org/10.1016/..
 
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10

Reduction of native oxides on InAs by atomic layer deposite..:

Timm, R. ; Fian, A. ; Hjort, M....
Applied Physics Letters.  97 (2010)  13 - p. , 2010
Link: https://doi.org/10.1063/..
 
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11

Vertical InAs Nanowire Wrap Gate Transistors with ft > 7 GH..:

Egard, M. ; Johansson, S. ; Johansson, A.-C....
Nano Letters.  10 (2010)  3 - p. 809-812 , 2010
Link: https://doi.org/10.1021/..
 
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12

Deposition of HfO2 on InAs by atomic-layer deposition:

Wheeler, D. ; Wernersson, L.-E. ; Fröberg, L....
Microelectronic Engineering.  86 (2009)  7-9 - p. 1561-1563 , 2009
Link: https://doi.org/10.1016/..
 
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13

Epitaxial Growth of Indium Arsenide Nanowires on Silicon Us..:

Mårtensson, T. ; Wagner, J. B. ; Hilner, E....
Advanced Materials.  19 (2007)  14 - p. 1801-1806 , 2007
Link: https://doi.org/10.1002/..
 
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14

Cover Picture: Epitaxial Growth of Indium Arsenide Nanowire..:

Mårtensson, T. ; Wagner, J. B. ; Hilner, E....
Advanced Materials.  19 (2007)  14 - p. , 2007
Link: https://doi.org/10.1002/..
 
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15

Nanowire-based one-dimensional electronics:

Thelander, C. ; Agarwal, P. ; Brongersma, S....
Materials Today.  9 (2006)  10 - p. 28-35 , 2006
Link: https://doi.org/10.1016/..
 
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