E-LIB Suche - Ergebnisse für: Then, Han Wui

1

PBTI in Scaled Oxide Submicron Enhancement Mode High-K Gall..:

, In: 2024 IEEE International Reliability Physics Symposium (IRPS),

Joy, Soumitra ; Joshi, Kaustubh ; Zubair, Ahmad... - p. 6B.1-1-6B.1-6 , 2024

2

Advancements in 300 mm GaN-on-Si Technology With Industry's..:

Yu, Qiang ; Farid, Ali A. ; Momson, Ibukunoluwa...
IEEE Microwave and Wireless Technology Letters. 34 (2024) 6 - p. 745-748 , 2024

Link: https://doi.org/10.1109/..

3

Enhancement-Mode 300-mm GaN-on-Si(111) With Integrated Si C..:

Then, Han Wui ; Radosavljevic, M. ; Yu, Q....
IEEE Microwave and Wireless Technology Letters. 33 (2023) 6 - p. 835-838 , 2023

Link: https://doi.org/10.1109/..

4

DrGaN: an Integrated CMOS Driver-GaN Power Switch Technolog..:

, In: 2023 International Electron Devices Meeting (IEDM),

Then, Han Wui ; Radosavljevic, M. ; Bader, S.... - p. 1-4 , 2023

Link: https://doi.org/10.1109/..

5

A 25.5-31GHz Power Amplifier Using Enhancement-Mode High-K ..:

, In: 2023 IEEE/MTT-S International Microwave Symposium - IMS 2023,

Yu, Qiang ; Then, Han Wui ; Momson, Ibukunoluwa... - p. 931-934 , 2023

Link: https://doi.org/10.1109/..

6

Scaled Submicron Field-Plated Enhancement Mode High-K Galli..:

, In: 2022 International Electron Devices Meeting (IEDM),

Then, Han Wui ; Radosavljevic, M. ; Koirala, P.... - p. 35.1.1-35.1.4 , 2022

Link: https://doi.org/10.1109/..

7

A Fully Integrated 3.2-4.7GHz Doherty Power Amplifier in 30..:

, In: 2022 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS),

Yu, Qiang ; Thomson, Derek ; Then, Han Wui... - p. 144-147 , 2022

Link: https://doi.org/10.1109/..

8

A 32-A, 5-V-Input, 94.2% Peak Efficiency High-Frequency Pow..:

Desai, Nachiket ; Then, Han Wui ; Yu, Jingshu...
IEEE Journal of Solid-State Circuits. 57 (2022) 4 - p. 1090-1099 , 2022

Link: https://doi.org/10.1109/..

9

5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm ..:

, In: 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits),

Yu, Qiang ; Then, Han Wui ; Thomson, Derek... - p. 126-127 , 2022

Link: https://doi.org/10.1109/..

10

Advanced Scaling of Enhancement Mode High-K Gallium Nitride..:

, In: 2021 IEEE International Electron Devices Meeting (IEDM),

Then, Han Wui ; Radosavljevic, M. ; Koirala, P.... - p. 11.1.1-11.1.4 , 2021

Link: https://doi.org/10.1109/..

11

A 32A 5V-Input, 94.2% Peak Efficiency High-Frequency Power ..:

, In: 2021 Symposium on VLSI Circuits,

Desai, Nachiket ; Krishnamurthy, Harish K. ; Lambert, William... - p. 1-2 , 2021

Link: https://doi.org/10.23919..

12

Prospects for Wide Bandgap and Ultrawide Bandgap CMOS Devic..:

Bader, Samuel James ; Lee, Hyunjea ; Chaudhuri, Reet...
IEEE Transactions on Electron Devices. 67 (2020) 10 - p. 4010-4020 , 2020

Link: https://doi.org/10.1109/..

13

GaN and Si Transistors on 300mm Si(111) enabled by 3D Monol..:

, In: 2020 IEEE Symposium on VLSI Technology,

Then, Han Wui ; Radosavljevic, M. ; Agababov, P.... - p. 1-2 , 2020

Link: https://doi.org/10.1109/..

14

High-K Gate Dielectric GaN MOS-HEMTs with Regrown n+ InGaN ..:

, In: 2019 Device Research Conference (DRC),

Then, Han Wui ; Dasgupta, Sansaptak ; Radosavljevic, Marko... - p. 39-40 , 2019

Link: https://doi.org/10.1109/..

15

Wurtzite phonons and the mobility of a GaN/AlN 2D hole gas:

Bader, Samuel James ; Chaudhuri, Reet ; Schubert, Martin F....
Applied Physics Letters. 114 (2019) 25 - p. , 2019

Link: https://doi.org/10.1063/..