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Tilak, Vinayak
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1

Combustion synthesis of graphene and ultracapacitor perform..:

KISHORE, M SATYA ; SRIMATHI, P ; KUMAR, SUNDEEP...
Bulletin of Materials Science.  36 (2013)  4 - p. 667-672 , 2013
Link: https://doi.org/10.1007/..
 
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2

Implementation of Sub-Resolvable Features for Precise Elect..:

McMahon, J. Jay ; Yu, Liang Chun ; Fronheiser, Jody...
Materials Science Forum.  717-720 (2012)  - p. 797-800 , 2012
Link: https://doi.org/10.4028/..
 
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3

300C Capable Digital Integrated Circuits in SiC Technology:

Patil, Amita ; Rao, Naresh ; Tilak, Vinayak
Materials Science Forum.  717-720 (2012)  - p. 1261-1264 , 2012
Link: https://doi.org/10.4028/..
 
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4

Frequency-Dependent Charge Pumping on 4H-SiC MOSFETs:

Yu, Liang Chun ; Fronheiser, Jody ; Tilak, Vinayak.
Materials Science Forum.  717-720 (2012)  - p. 793-796 , 2012
Link: https://doi.org/10.4028/..
 
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5

Understanding the Inversion-Layer Properties of the 4H-SiC/..:

Matocha, Kevin ; Tilak, Vinayak
Materials Science Forum.  679-680 (2011)  - p. 318-325 , 2011
Link: https://doi.org/10.4028/..
 
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6

300°C Silicon Carbide Integrated Circuits:

Stum, Zachary ; Tilak, Vinayak ; Losee, Peter A...
Materials Science Forum.  679-680 (2011)  - p. 730-733 , 2011
Link: https://doi.org/10.4028/..
 
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7

Evaluation of 4H-SiC Carbon Face Gate Oxide Reliability:

Fronheiser, Jody ; Chatterjee, Aveek ; Grossner, Ulrike...
Materials Science Forum.  679-680 (2011)  - p. 354-357 , 2011
Link: https://doi.org/10.4028/..
 
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8

Comparison of Inversion Layer Electron Transport of Lightly..:

Tilak, Vinayak ; Matocha, Kevin ; Dunne, Greg
Materials Science Forum.  645-648 (2010)  - p. 1005-1008 , 2010
Link: https://doi.org/10.4028/..
 
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9

Silicon carbide oxidation in the presence of cesium: Modeli..:

Chatterjee, Aveek ; Piao, Hong ; Matocha, Kevin...
Journal of Applied Physics.  108 (2010)  8 - p. , 2010
Link: https://doi.org/10.1063/..
 
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10

Multiscale Modeling and Analysis of the Nitridation Effect ..:

Chatterjee, Aveek ; Matocha, Kevin ; Tilak, Vinayak..
Materials Science Forum.  645-648 (2010)  - p. 479-482 , 2010
Link: https://doi.org/10.4028/..
 
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11

Wafer-Level Hall Measurement on SiC MOSFET:

Yu, Liang Chun ; Cheung, Kin P. ; Tilak, Vinayak...
Materials Science Forum.  645-648 (2010)  - p. 979-982 , 2010
Link: https://doi.org/10.4028/..
 
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12

4H-SiC Oxide Characterization with SIMS Using a 13C Tracer:

Fronheiser, Jody ; Matocha, Kevin ; Tilak, Vinayak.
Materials Science Forum.  615-617 (2009)  - p. 513-516 , 2009
Link: https://doi.org/10.4028/..
 
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13

Inversion layer electron transport in 4H‐SiC metal–oxide–se..:

Tilak, Vinayak
physica status solidi (a).  206 (2009)  10 - p. 2391-2402 , 2009
Link: https://doi.org/10.1002/..
 
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14

Quasi-Charge-Sheet Model for Inversion Layer Mobility in 4H..:

Rao, R. Ramakrishna ; Matocha, Kevin ; Tilak, Vinayak
Materials Science Forum.  615-617 (2009)  - p. 797-800 , 2009
Link: https://doi.org/10.4028/..
 
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15

Interface Trap Density and Mobility Characterization of Sil..:

Tilak, Vinayak ; Matocha, Kevin ; Dunne, Greg
Materials Science Forum.  615-617 (2009)  - p. 801-804 , 2009
Link: https://doi.org/10.4028/..
 
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