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Todokoro, Yoshihiro
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1

Development of Mass Production Technology of Highly Permeab..:

Sawamura, Ken-ichi ; Okamoto, Shigeru ; Todokoro, Yoshihiro
Membranes.  9 (2019)  8 - p. 103 , 2019
Link: https://doi.org/10.3390/..
 
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2

Elimination of interface states in the GaAs band-gap by cya..:

Kubota, Tomohiro ; Ivančo, Ján ; Takahashi, Masao...
Surface Science.  529 (2003)  3 - p. 329-337 , 2003
Link: https://doi.org/10.1016/..
 
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3

Decrease in the leakage current density of Si-based metal–o..:

Asano, Akira ; Asuha ; Maida, Osamu..
Applied Physics Letters.  80 (2002)  24 - p. 4552-4554 , 2002
Link: https://doi.org/10.1063/..
 
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4

Ultrathin silicon dioxide layers with a low leakage current..:

Asuha ; Kobayashi, Takuya ; Maida, Osamu...
Applied Physics Letters.  81 (2002)  18 - p. 3410-3412 , 2002
Link: https://doi.org/10.1063/..
 
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5

Decrease in gap states at ultrathin SiO2/Si interfaces by c..:

Kobayashi, Hikaru ; Asano, Akira ; Takahashi, Masao..
Applied Physics Letters.  77 (2000)  26 - p. 4392-4394 , 2000
Link: https://doi.org/10.1063/..
 
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6

Reduction in leakage current density of Si-based metal–oxid..:

Yuasa, Toshiro ; Asuha ; Yoneda, Kenji..
Applied Physics Letters.  77 (2000)  24 - p. 4031-4033 , 2000
Link: https://doi.org/10.1063/..
 
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7

Mechanism of low temperature nitridation of silicon oxide l..:

Mizokuro, Toshiko ; Yoneda, Kenji ; Todokoro, Yoshihiro.
Journal of Applied Physics.  85 (1999)  5 - p. 2921-2928 , 1999
Link: https://doi.org/10.1063/..
 
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8

Mechanism of platinum-enhanced oxidation of silicon at low ..:

Kobayashi, Hikaru ; Yuasa, Toshiro ; Yamanaka, Kazuhiro..
The Journal of Chemical Physics.  109 (1998)  12 - p. 4997-5001 , 1998
Link: https://doi.org/10.1063/..
 
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9

Studies on interface states at ultrathin SiO2/Si(100) inter..:

Kobayashi, Hikaru ; Asano, Akira ; Asada, Shinya...
Journal of Applied Physics.  83 (1998)  4 - p. 2098-2103 , 1998
Link: https://doi.org/10.1063/..
 
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10

Low temperature catalytic formation of Si-based metal–oxide..:

Kobayashi, Hikaru ; Yuasa, Toshiro ; Nakato, Yoshihiro..
Journal of Applied Physics.  80 (1996)  7 - p. 4124-4128 , 1996
Link: https://doi.org/10.1063/..
 
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11

The Influence of Medium Dose Ion Implantation on the Reliab..:

Yoneda, Kenji ; Hagiwara, Kenji ; Todokoro, Yoshihiro
Journal of The Electrochemical Society.  142 (1995)  5 - p. 1619-1625 , 1995
Link: https://doi.org/10.1149/..
 
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12

The Reliability Evaluation of Thin Silicon Dioxide Using th..:

Yoneda, Kenji ; Okuma, Keiji ; Hagiwara, Kenji.
Journal of The Electrochemical Society.  142 (1995)  2 - p. 596-600 , 1995
Link: https://doi.org/10.1149/..
 
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13

The Dielectric Breakdown Characteristics of Thin Silicon Di..:

Yoneda, Kenji ; Hagiwara, Kenji ; Oishi, Hiroshi.
Journal of The Electrochemical Society.  142 (1995)  12 - p. 4304-4309 , 1995
Link: https://doi.org/10.1149/..
 
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14

Optimization of Amorphous Carbon-Deposited Antireflective L..:

Tani, Yoshiyuki ; Mito, Hideaki ; Okuda, Yoshimitsu...
Japanese Journal of Applied Physics.  32 (1993)  12S - p. 5909 , 1993
Link: https://doi.org/10.1143/..
 
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15

Top‐Oxidation Effects on the Reliability of Oxide‐Nitride‐O..:

Yoneda, Kenji ; Todokoro, Yoshihiro ; Inoue, Morio
Journal of The Electrochemical Society.  140 (1993)  10 - p. 2975-2981 , 1993
Link: https://doi.org/10.1149/..
 
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