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Todokoro, Yoshihiro
29
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Online (29)
Mediatypes
Articles (Online) (26)
OpenAccess-fulltext (3)
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1
Development of Mass Production Technology of Highly Permeab..:
Sawamura, Ken-ichi
;
Okamoto, Shigeru
;
Todokoro, Yoshihiro
Membranes. 9 (2019) 8 - p. 103 , 2019
Link:
https://doi.org/10.3390/..
?
2
Elimination of interface states in the GaAs band-gap by cya..:
Kubota, Tomohiro
;
Ivančo, Ján
;
Takahashi, Masao
...
Surface Science. 529 (2003) 3 - p. 329-337 , 2003
Link:
https://doi.org/10.1016/..
?
3
Decrease in the leakage current density of Si-based metal–o..:
Asano, Akira
;
Asuha
;
Maida, Osamu
..
Applied Physics Letters. 80 (2002) 24 - p. 4552-4554 , 2002
Link:
https://doi.org/10.1063/..
?
4
Ultrathin silicon dioxide layers with a low leakage current..:
Asuha
;
Kobayashi, Takuya
;
Maida, Osamu
...
Applied Physics Letters. 81 (2002) 18 - p. 3410-3412 , 2002
Link:
https://doi.org/10.1063/..
?
5
Decrease in gap states at ultrathin SiO2/Si interfaces by c..:
Kobayashi, Hikaru
;
Asano, Akira
;
Takahashi, Masao
..
Applied Physics Letters. 77 (2000) 26 - p. 4392-4394 , 2000
Link:
https://doi.org/10.1063/..
?
6
Reduction in leakage current density of Si-based metal–oxid..:
Yuasa, Toshiro
;
Asuha
;
Yoneda, Kenji
..
Applied Physics Letters. 77 (2000) 24 - p. 4031-4033 , 2000
Link:
https://doi.org/10.1063/..
?
7
Mechanism of low temperature nitridation of silicon oxide l..:
Mizokuro, Toshiko
;
Yoneda, Kenji
;
Todokoro, Yoshihiro
.
Journal of Applied Physics. 85 (1999) 5 - p. 2921-2928 , 1999
Link:
https://doi.org/10.1063/..
?
8
Mechanism of platinum-enhanced oxidation of silicon at low ..:
Kobayashi, Hikaru
;
Yuasa, Toshiro
;
Yamanaka, Kazuhiro
..
The Journal of Chemical Physics. 109 (1998) 12 - p. 4997-5001 , 1998
Link:
https://doi.org/10.1063/..
?
9
Studies on interface states at ultrathin SiO2/Si(100) inter..:
Kobayashi, Hikaru
;
Asano, Akira
;
Asada, Shinya
...
Journal of Applied Physics. 83 (1998) 4 - p. 2098-2103 , 1998
Link:
https://doi.org/10.1063/..
?
10
Low temperature catalytic formation of Si-based metal–oxide..:
Kobayashi, Hikaru
;
Yuasa, Toshiro
;
Nakato, Yoshihiro
..
Journal of Applied Physics. 80 (1996) 7 - p. 4124-4128 , 1996
Link:
https://doi.org/10.1063/..
?
11
The Influence of Medium Dose Ion Implantation on the Reliab..:
Yoneda, Kenji
;
Hagiwara, Kenji
;
Todokoro, Yoshihiro
Journal of The Electrochemical Society. 142 (1995) 5 - p. 1619-1625 , 1995
Link:
https://doi.org/10.1149/..
?
12
The Reliability Evaluation of Thin Silicon Dioxide Using th..:
Yoneda, Kenji
;
Okuma, Keiji
;
Hagiwara, Kenji
.
Journal of The Electrochemical Society. 142 (1995) 2 - p. 596-600 , 1995
Link:
https://doi.org/10.1149/..
?
13
The Dielectric Breakdown Characteristics of Thin Silicon Di..:
Yoneda, Kenji
;
Hagiwara, Kenji
;
Oishi, Hiroshi
.
Journal of The Electrochemical Society. 142 (1995) 12 - p. 4304-4309 , 1995
Link:
https://doi.org/10.1149/..
?
14
Optimization of Amorphous Carbon-Deposited Antireflective L..:
Tani, Yoshiyuki
;
Mito, Hideaki
;
Okuda, Yoshimitsu
...
Japanese Journal of Applied Physics. 32 (1993) 12S - p. 5909 , 1993
Link:
https://doi.org/10.1143/..
?
15
Top‐Oxidation Effects on the Reliability of Oxide‐Nitride‐O..:
Yoneda, Kenji
;
Todokoro, Yoshihiro
;
Inoue, Morio
Journal of The Electrochemical Society. 140 (1993) 10 - p. 2975-2981 , 1993
Link:
https://doi.org/10.1149/..
1-15